18309637. MEMORY DEVICE AND OPERATING METHOD THEREOF simplified abstract (SK hynix Inc.)
MEMORY DEVICE AND OPERATING METHOD THEREOF
Organization Name
Inventor(s)
Gil Bok Choi of Icheon-si Gyeonggi-do (KR)
Dae Hwan Yun of Icheon-si Gyeonggi-do (KR)
MEMORY DEVICE AND OPERATING METHOD THEREOF - A simplified explanation of the abstract
This abstract first appeared for US patent application 18309637 titled 'MEMORY DEVICE AND OPERATING METHOD THEREOF
Simplified Explanation
The memory device described in the patent application performs a detrap operation on a selected memory block when the number of program/erase cycles of the block reaches a certain threshold. This operation involves applying a heating current to a heating layer that is thermally coupled to the channel of each string in the selected memory block.
- The memory device performs a detrap operation on a memory block after a predetermined number of program/erase cycles.
- A heating current is applied to a heating layer that is thermally coupled to the channels of the memory block's strings during the detrap operation.
Potential Applications
The technology described in the patent application could be applied in:
- Solid-state drives
- Flash memory devices
- Embedded systems
Problems Solved
This technology addresses the following issues:
- Degradation of memory blocks due to repeated program/erase cycles
- Trapping of charges in the memory cells
Benefits
The benefits of this technology include:
- Extending the lifespan of memory blocks
- Improving the reliability of memory devices
- Enhancing data retention in memory cells
Potential Commercial Applications
This technology could be utilized in various commercial applications such as:
- Consumer electronics
- Automotive systems
- Industrial automation
Possible Prior Art
One possible prior art related to this technology is the use of thermal annealing techniques in non-volatile memory devices to improve data retention and endurance.
Unanswered Questions
How does the detrap operation impact the overall performance of the memory device?
The detrap operation may consume additional power and time, potentially affecting the speed and efficiency of the memory device.
Are there any limitations to the number of detrap operations that can be performed on a memory block?
Repeated detrap operations may cause wear and tear on the memory block, leading to potential reliability issues in the long run.
Original Abstract Submitted
A memory device performs a detrap operation on a selected memory block when the number of program/erase cycles of the selected memory block equals or exceeds a predetermined set number. A circuit included in the memory device applies a heating current to a heating layer, thermally coupled to the channel of each of the plurality of strings included in the selected memory block in the detrap operation.
