18281993. NAPHTHALENE UNIT-CONTAINING RESIST UNDERLAYER FILM-FORMING COMPOSITION simplified abstract (NISSAN CHEMICAL CORPORATION)

NAPHTHALENE UNIT-CONTAINING RESIST UNDERLAYER FILM-FORMING COMPOSITION

Organization Name

NISSAN CHEMICAL CORPORATION

Inventor(s)

Hiroto Ogata of Toyama-shi (JP)

Ryuta Mizuochi of Toyama-shi (JP)

Tomotada Hirohara of Toyama-shi (JP)

Mamoru Tamura of Toyama-shi (JP)

NAPHTHALENE UNIT-CONTAINING RESIST UNDERLAYER FILM-FORMING COMPOSITION - A simplified explanation of the abstract

This abstract first appeared for US patent application 18281993 titled 'NAPHTHALENE UNIT-CONTAINING RESIST UNDERLAYER FILM-FORMING COMPOSITION

The patent application describes a composition for forming a resist underlayer film that facilitates the creation of a desired resist pattern, a method for producing a resist pattern using this composition, and a method for producing a semiconductor device.

• The resist underlayer film-forming composition includes a solvent and a product of reaction between compound (A) and compound (B) containing at least two groups reactive with an epoxy group.
• Compound (A) is represented by formula (100) and includes aromatic rings, alkylene groups, and epoxy groups.
• Compound (B) contains groups that can react with the epoxy groups in compound (A) to form the resist underlayer film.

Potential Applications: - This technology can be used in the semiconductor industry for producing intricate resist patterns on semiconductor devices.

Problems Solved: - The technology addresses the need for a reliable method of forming resist patterns with high precision and accuracy.

Benefits: - Improved efficiency in creating resist patterns on semiconductor devices. - Enhanced control over the patterning process.

Commercial Applications: - This technology has potential commercial applications in semiconductor manufacturing companies for producing advanced semiconductor devices with complex patterns.

Questions about the technology: 1. How does the resist underlayer film-forming composition improve the process of creating resist patterns on semiconductor devices? 2. What are the key advantages of using compound (A) and compound (B) in the resist underlayer film-forming composition?

Original Abstract Submitted

A composition for forming a resist underlayer film that enables the formation of a desired resist pattern; a method for producing a resist pattern, the method using this resist underlayer film-forming composition; and a method for producing a semiconductor device. The resist underlayer film-forming composition includes a solvent and a product of reaction between compound (A) represented by formula (100) below. In formula (100), Ar1 and Ar2 each independently represent a C6-C40 aromatic ring that may be substituted, at least one of Ar1 and Ar2 is a naphthalene ring, L1 represents a single bond, a C1-C10 alkylene group that may be substituted, or a C2-C10 alkenylene group that may be substituted, T1 and T2 each independently represent a single bond, an ester bond or an ether bond, and E represents an epoxy group) and compound (B) containing at least two groups having reactivity with an epoxy group.