18275359. FILM FORMING DEVICE AND FILM FORMING METHOD simplified abstract (Tokyo Electron Limited)
FILM FORMING DEVICE AND FILM FORMING METHOD
Organization Name
Inventor(s)
Jun Yamawaku of Nirasaki City, Yamanashi (JP)
FILM FORMING DEVICE AND FILM FORMING METHOD - A simplified explanation of the abstract
This abstract first appeared for US patent application 18275359 titled 'FILM FORMING DEVICE AND FILM FORMING METHOD
The patent application describes a device with a plasma generation chamber that activates a second processing gas for film formation on a substrate. The device also includes an evacuation mechanism and a supply destination changing valve.
- Plasma generation chamber with a mechanism to activate a second processing gas
- Evacuation mechanism to remove gas from the chamber
- Supply destination changing valve to switch the supply destination of the second processing gas between downstream side and processing space
Potential Applications: - Semiconductor manufacturing - Thin film deposition processes - Surface modification of materials
Problems Solved: - Efficient film formation on substrates - Controlled activation of processing gases - Improved process repeatability
Benefits: - Enhanced film quality - Increased process efficiency - Reduced gas consumption
Commercial Applications: Title: Advanced Plasma Film Deposition Device for Semiconductor Manufacturing This technology can be used in semiconductor fabrication facilities to improve film deposition processes, leading to higher quality and more reliable semiconductor products.
Questions about the technology: 1. How does the device ensure the precise activation of the second processing gas? 2. What are the advantages of using a supply destination changing valve in this plasma generation system?
Frequently Updated Research: Researchers are constantly exploring new plasma generation techniques and gas activation methods to enhance film deposition processes in various industries. Stay updated on the latest advancements in plasma technology for manufacturing applications.
Original Abstract Submitted
[Solution] A device according to the present disclosure comprises: a plasma generation chamber that is provided with a plasma generation mechanism for activating a second processing gas, when forming a film on a substrate by supplying each of a first processing gas, a substitution gas, the plasma-activated second processing gas, and the substitution gas, in order and by turns, to a processing vessel in which an interior processing space is evacuated so as to become a vacuum atmosphere; an evacuation mechanism that evacuates the plasma generation chamber; and a supply destination changing valve that is provided on an evacuation path connecting the plasma generation chamber and the evacuation mechanism, and opens and closes such that the supply destination of the plasma-activated second processing gas switches between a downstream side of the evacuation path, and the processing space.
