18261223. SWITCH DEVICE AND MEMORY UNIT simplified abstract (SONY SEMICONDUCTOR SOLUTIONS CORPORATION)

SWITCH DEVICE AND MEMORY UNIT

Organization Name

SONY SEMICONDUCTOR SOLUTIONS CORPORATION

Inventor(s)

MINORU Ikarashi of TOKYO (JP)

SEIJI Nonoguchi of KANAGAWA (JP)

SWITCH DEVICE AND MEMORY UNIT - A simplified explanation of the abstract

This abstract first appeared for US patent application 18261223 titled 'SWITCH DEVICE AND MEMORY UNIT

The abstract of this patent application describes a switch device with a unique structure involving a switch layer made of specific elements.

• The switch device includes a first electrode, a second electrode, and a switch layer between them.
• The switch layer consists of a combination of germanium or silicon, arsenic, phosphorus, antimony, selenium, and tellurium.
• The switch layer is composed of at least one first layer and at least one second layer stacked together.
• The first layer contains the third element in a composition ratio of 50-80 atomic % and has a negative temperature dependence of threshold voltage.
• The second layer contains the first element in a composition ratio of 20-50 atomic % and has a positive temperature dependence of threshold voltage.

Potential Applications: - This switch device can be used in electronic devices requiring precise control of electrical currents. - It may find applications in memory devices, sensors, and other semiconductor devices.

Problems Solved: - Provides a more stable and controllable switch device with improved performance characteristics. - Offers a solution for enhancing the efficiency and reliability of electronic devices.

Benefits: - Improved performance and stability in electronic devices. - Enhanced control over electrical currents. - Potential for increased efficiency and reliability in semiconductor devices.

Commercial Applications: Title: Innovative Switch Device for Enhanced Electronic Control This technology can be utilized in the development of advanced electronic devices such as memory chips, sensors, and other semiconductor components. Its improved performance and stability characteristics make it a valuable asset in the electronics industry.

Questions about Switch Devices: 1. How does the composition of the switch layer affect the performance of the device? The composition of the switch layer plays a crucial role in determining the threshold voltage and temperature dependence of the device, ultimately impacting its performance and stability.

2. What are the potential challenges in scaling up the production of these switch devices for commercial applications? Scaling up production may involve challenges related to manufacturing processes, material sourcing, and quality control to ensure consistent performance in mass-produced devices.

Original Abstract Submitted

A switch device of one embodiment of the present disclosure includes a first electrode, a second electrode disposed to be opposed to the first electrode, and a switch layer provided between the first electrode and the second electrode and including a first element selected from germanium and silicon, a second element selected from arsenic, phosphorus, and antimony, and a third element selected from selenium and tellurium. The switch layer includes at least one first layer and at least one second layer that are stacked. The first layer includes at least one kind of the second element and at least one kind of the third element, includes the third element in a range of 50 atomic % or more and 80 atomic % or less in composition ratio, and is negative in temperature dependence of a threshold voltage. The second layer includes at least one kind of the first element and at least one kind of the third element, includes the first element in a range of 20 atomic % or more and 50 atomic % or less in composition ratio, and is positive in temperature dependence of the threshold voltage.