18244242. MEMORY DEVICE AND MANUFACTURING METHOD THEREOF (NANYA TECHNOLOGY CORPORATION)
MEMORY DEVICE AND MANUFACTURING METHOD THEREOF
Organization Name
Inventor(s)
Jhen-Yu Tsai of Kaohsiung City (TW)
MEMORY DEVICE AND MANUFACTURING METHOD THEREOF
This abstract first appeared for US patent application 18244242 titled 'MEMORY DEVICE AND MANUFACTURING METHOD THEREOF
Original Abstract Submitted
A manufacturing method of a memory device includes forming a capacitor in a first dielectric layer, and forming a bottom electrode over the capacitor. A word line and a second dielectric layer are formed over the bottom electrode and the first dielectric layer, in which the word line is embedded in the second dielectric layer. A bit line contact is formed over the second dielectric layer, in which a vertical projection of the bit line contact on the first dielectric layer is spaced apart a vertical projection of the bottom electrode on the first dielectric layer. After forming the bit line contact, a channel in contact with the bottom electrode and the word line is formed. A top electrode is formed over the channel and in contact with the bit line contact.