METHODS OF ETCHING SILICON-AND-OXYGEN-CONTAINING FEATURES AT LOW TEMPERATURES

Organization Name

Applied Materials, Inc.

Inventor(s)

Anatoli Chlenov of San Jose CA (US)

Kenji Takeshita of Sunnyvale CA (US)

Alok Ranjan of San Ramon CA (US)

Qian Fu of Pleasanton CA (US)

Hikaru Watanabe of Milpitas CA (US)

Akhil Mehrotra of San Jose CA (US)

Lei Liao of San Jose CA (US)

Zhonghua Yao of Santa Clara CA (US)

Sonam Dorje Sherpa of San Ramon CA (US)

METHODS OF ETCHING SILICON-AND-OXYGEN-CONTAINING FEATURES AT LOW TEMPERATURES

This abstract first appeared for US patent application 18236042 titled 'METHODS OF ETCHING SILICON-AND-OXYGEN-CONTAINING FEATURES AT LOW TEMPERATURES

Original Abstract Submitted

Exemplary semiconductor processing methods may include providing a fluorine-containing precursor and a hydrogen-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be housed in the processing region. A layer of a silicon-containing material may be disposed on the substrate. The methods may include forming plasma effluents of the fluorine-containing precursor and the hydrogen-containing precursor. The methods may include contacting the substrate with the plasma effluents of the fluorine-containing precursor and the hydrogen-containing precursor. The contacting may etch a feature in the layer of silicon-containing material. A substrate support pedestal temperature may be maintained at less than or about −20° C. during the semiconductor processing method.