SEMICONDUCTOR DEVICE, IMAGE SENSOR

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SEMICONDUCTOR DEVICE, IMAGE SENSOR - A simplified explanation of the abstract

This abstract first appeared for US patent application 18231445 titled 'SEMICONDUCTOR DEVICE, IMAGE SENSOR

The semiconductor device and image sensor described in the patent application involve a unique structure with multiple interlayer insulating layers and contact plugs.

The semiconductor device includes a gate pattern on a substrate, with first and second interlayer insulating layers on the gate pattern.
A first contact plug passes through the interlayer insulating layers and is in contact with the substrate, with different widths for the contact parts in each layer.
The density of the first interlayer insulating layer is smaller than that of the second interlayer insulating layer, providing specific electrical properties to the device.

Potential Applications: - This technology can be used in the manufacturing of advanced semiconductor devices for various electronic applications. - It can enhance the performance and efficiency of image sensors and other semiconductor components in digital devices.

Problems Solved: - The technology addresses the need for improved electrical connectivity and insulation in semiconductor devices. - It solves challenges related to signal transmission and interference in complex electronic systems.

Benefits: - Enhanced electrical performance and reliability in semiconductor devices. - Improved integration and miniaturization capabilities for electronic components. - Potential cost savings in manufacturing processes due to optimized design.

Commercial Applications: - The technology can be applied in the production of smartphones, digital cameras, and other consumer electronics. - It has potential uses in automotive electronics, medical devices, and industrial equipment for improved functionality and performance.

Questions about the technology: 1. How does the unique structure of the interlayer insulating layers and contact plugs contribute to the overall performance of the semiconductor device? 2. What specific advantages does the density contrast between the interlayer insulating layers offer in terms of electrical properties and signal transmission efficiency?

Original Abstract Submitted

A semiconductor device and an image sensor are disclosed. The semiconductor device includes: a gate pattern disposed on a substrate; a first interlayer insulating layer on a sidewall of the gate pattern; a second interlayer insulating layer on the gate pattern and the first interlayer insulating layer; and a first contact plug passing through the second interlayer insulating layer and the first interlayer insulating layer and being in contact with the substrate, where the first contact plug comprises a first contact part in the first interlayer insulating layer and a second contact part in the second interlayer insulating layer, a density of the first interlayer insulating layer is smaller than a density of the second interlayer insulating layer, the first contact part of the first contact plug has a first width, and the second contact part of the first contact plug has a second width smaller than the first width.