18231127. MEMORY DEVICE AND METHOD OF OPERATING THE SAME simplified abstract (SK hynix Inc.)

MEMORY DEVICE AND METHOD OF OPERATING THE SAME

Organization Name

SK hynix Inc.

Inventor(s)

Chang Beom Woo of Icheon-si Gyeonggi-do (KR)

MEMORY DEVICE AND METHOD OF OPERATING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 18231127 titled 'MEMORY DEVICE AND METHOD OF OPERATING THE SAME

Simplified Explanation

The patent application describes a memory device and a method of operating it. The device includes a memory block with multiple memory strings, a peripheral circuit for erase and program operations, and control logic for managing these operations, including an abnormally injected electron removal operation.

• Memory device with memory block and peripheral circuit
• Control logic for erase, program, and electron removal operations
• Abnormally injected electron removal operation to clear trapped electrons in memory cells

Key Features and Innovation

• Memory device with advanced control logic for efficient operations
• Abnormally injected electron removal operation to improve memory cell performance
• Integration of erase, program, and electron removal operations in a single device

Potential Applications

• Data storage devices
• Embedded systems
• Consumer electronics

Problems Solved

• Efficient memory cell operation
• Enhanced data retention
• Improved overall memory device performance

Benefits

• Higher reliability
• Faster data access
• Extended lifespan of memory devices

Commercial Applications

Memory Devices and Data Storage Solutions

This technology can be applied in various memory devices and data storage solutions, enhancing their performance and reliability. The efficient operation and advanced features make it suitable for commercial use in a wide range of applications.

Prior Art

There may be prior art related to memory devices, control logic, and memory cell operations that could provide additional insights into the innovation described in this patent application.

Frequently Updated Research

Research in the field of memory devices and semiconductor technology is constantly evolving. Stay updated on the latest advancements to leverage the full potential of this innovative technology.

Questions about Memory Device Technology

How does the abnormally injected electron removal operation improve memory device performance?

The abnormally injected electron removal operation helps clear trapped electrons in memory cells, enhancing data retention and overall device performance.

What are the potential commercial applications of this memory device technology?

The technology can be used in various data storage solutions, embedded systems, and consumer electronics to improve reliability and performance.

Original Abstract Submitted

Provided herein may be a memory device and a method of operating the same. The memory device may include a memory block including a plurality of memory strings, a peripheral circuit configured to perform an erase operation and a program operation on the memory block, and a control logic configured to control the peripheral circuit to perform the erase operation and the program operation on the memory block, wherein the control logic is configured to control the peripheral circuit to perform an abnormally injected electron removal operation that removes abnormally injected electrons trapped in a charge storage layer of a plurality of memory cells included in the memory block after the erase operation has been completed.