SEMICONDUCTOR LAYER WITH DRY DEPOSITION LAYER

Organization Name

Intel Corporation

Inventor(s)

Marcel Arlan Wall of Phoenix AZ (US)

Hamid Azimi of Chandler AZ (US)

Rahul N. Manepalli of Chandler AZ (US)

Srinivas Venkata Ramanuja Pietambaram of Chandler AZ (US)

Darko Grujicic of Chandler AZ (US)

Steve Cho of Chandler AZ (US)

Thomas L. Sounart of Chandler AZ (US)

Gang Duan of Chandler AZ (US)

Jung Kyu Han of Chandler AZ (US)

Suddhasattwa Nad of Chandler AZ (US)

Benjamin Duong of Phoenix AZ (US)

Shayan Kaviani of Phoenix AZ (US)

SEMICONDUCTOR LAYER WITH DRY DEPOSITION LAYER

This abstract first appeared for US patent application 18217123 titled 'SEMICONDUCTOR LAYER WITH DRY DEPOSITION LAYER

Original Abstract Submitted

An intermediary layer, such as a dry deposition layer or a surface finish, is deposited on at least one exposed surface of surfaces within a layer of a semiconductor substrate. The intermediary layer is deposited on at least an electrically conductive material within a cavity in a layer. The intermediary layer is deposited using a chemical deposition process such as physical vapor deposition, chemical vapor deposition or sputtering.