18217056. FORMING POROUS DIELECTRIC STRUCTURES WITH SPATIALLY-CONTROLLED POROSITY (Intel Corporation)
FORMING POROUS DIELECTRIC STRUCTURES WITH SPATIALLY-CONTROLLED POROSITY
Organization Name
Inventor(s)
Jieying Kong of Chandler AZ (US)
Dilan Seneviratne of Phoenix AZ (US)
Whitney Bryks of Tempe AZ (US)
FORMING POROUS DIELECTRIC STRUCTURES WITH SPATIALLY-CONTROLLED POROSITY
This abstract first appeared for US patent application 18217056 titled 'FORMING POROUS DIELECTRIC STRUCTURES WITH SPATIALLY-CONTROLLED POROSITY
Original Abstract Submitted
Microelectronic integrated circuit package structures include one or more integrated circuit (IC) package metallization levels comprising metallization features. A dielectric material is adjacent to one or more of the metallization features, where the dielectric material comprises a matrix material and a surfactant. A plurality of substantially spherical pores are within the matrix material, where the substantially spherical pores are surrounded by an outer shell comprising the matrix material.