VERTICALLY INTEGRATED MICRO-BOLOMETER AND MANUFACTURING METHOD THEREOF

Organization Name

INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE

Inventor(s)

VERTICALLY INTEGRATED MICRO-BOLOMETER AND MANUFACTURING METHOD THEREOF - A simplified explanation of the abstract

This abstract first appeared for US patent application 18201996 titled 'VERTICALLY INTEGRATED MICRO-BOLOMETER AND MANUFACTURING METHOD THEREOF

Simplified Explanation: The patent application describes a vertically integrated micro-bolometer, which combines an integrated circuit chip with an infrared sensing film using a metal bonding layer.

The integrated circuit chip consists of a silicon substrate, a circuit element, and a dielectric layer.
The infrared sensing film includes a top absorbing layer, a sensing layer, and a bottom absorbing layer, all made of materials compatible with semiconductor manufacturing processes.
The metal bonding layer connects the integrated circuit chip and the infrared sensing film to create the micro-bolometer.

Key Features and Innovation:

Vertically integrated micro-bolometer combining integrated circuit chip and infrared sensing film.
Materials used in the sensing film are compatible with semiconductor manufacturing processes.
Metal bonding layer connects the components to form a cohesive unit.

Potential Applications: The technology can be used in thermal imaging cameras, night vision devices, and other infrared sensing applications.

Problems Solved: The technology addresses the need for a compact and efficient micro-bolometer design that is compatible with semiconductor manufacturing processes.

Benefits:

Improved performance and reliability in infrared sensing applications.
Simplified manufacturing process due to compatibility with semiconductor processes.

Commercial Applications: Potential commercial applications include thermal imaging systems for security, surveillance, and industrial monitoring.

Prior Art: Readers interested in prior art related to this technology can explore patents in the field of micro-bolometers and infrared sensing devices.

Frequently Updated Research: Stay informed about the latest advancements in micro-bolometer technology and semiconductor manufacturing processes to enhance the performance of the integrated device.

Questions about Vertically Integrated Micro-Bolometer: 1. What are the key components of a vertically integrated micro-bolometer? 2. How does the metal bonding layer contribute to the functionality of the device?

Original Abstract Submitted

A vertically integrated micro-bolometer includes an integrated circuit chip, an infrared sensing film, and a metal bonding layer. The integrated circuit chip includes a silicon substrate, a circuit element, and a dielectric layer disposed on the silicon substrate. The infrared sensing film includes a top absorbing layer, a sensing layer, and a bottom absorbing layer. The sensing layer is disposed between the top absorbing layer and the bottom absorbing layer. Materials of the top absorbing layer, the sensing layer, and the bottom absorbing layer are materials compatible with a semiconductor manufacturing process. The metal bonding layer connects the dielectric layer on the silicon substrate in the integrated circuit chip and the bottom absorbing layer of the infrared sensing film to form a vertically integrated micro-bolometer. In one embodiment, the infrared sensing film is divided into a central sensing film, a surrounding sensing film, and a plurality of connecting portions by a plurality of slots. The surrounding sensing film surrounds the central sensing film. Each of the connecting portions connects the surrounding sensing film and the central sensing film. A central distance from the bottom absorbing layer of the central sensing film to the silicon substrate is substantially equal to a surrounding distance from the bottom absorbing layer of the surrounding sensing film to the silicon substrate.