18197543. Electromagnetic Radiation Detector with Improved Performance simplified abstract (Apple Inc.)
Electromagnetic Radiation Detector with Improved Performance
Organization Name
Inventor(s)
Matthew T. Morea of Cupertino CA (US)
Daniel Mahgerefteh of Campbell CA (US)
Romain F. Chevallier of Santa Clara CA (US)
Electromagnetic Radiation Detector with Improved Performance - A simplified explanation of the abstract
This abstract first appeared for US patent application 18197543 titled 'Electromagnetic Radiation Detector with Improved Performance
Simplified Explanation
An electromagnetic radiation detector is described in this patent application. The detector consists of a PN junction formed between two group III-V semiconductor materials. The PN junction is created through in-situ doping of the layers, which enhances the quality of the junction and improves the performance of the detector.
- The patent application describes an electromagnetic radiation detector.
- The detector utilizes a PN junction between two group III-V semiconductor materials.
- The PN junction is formed by in-situ doping of the layers.
- The in-situ doping improves the quality of the junction.
- The improved junction enhances the performance of the electromagnetic radiation detector.
Potential Applications
This technology has potential applications in various fields, including:
- Medical imaging: The electromagnetic radiation detector can be used in medical imaging devices to detect and analyze X-rays and other forms of radiation.
- Security screening: The detector can be utilized in security screening systems to identify and analyze different types of electromagnetic radiation, such as gamma rays.
- Environmental monitoring: This technology can be employed in environmental monitoring systems to detect and measure radiation levels in the environment.
Problems Solved
The technology presented in this patent application addresses the following problems:
- Low-quality junctions: The in-situ doping technique improves the quality of the PN junction, resulting in better performance and accuracy of the electromagnetic radiation detector.
- Limited sensitivity: By enhancing the junction quality, the detector becomes more sensitive to electromagnetic radiation, allowing for more precise measurements and detection.
- Performance limitations: The improved junction and overall design of the detector overcome performance limitations of existing radiation detectors, providing better efficiency and reliability.
Benefits
This technology offers several benefits:
- Improved detection accuracy: The high-quality PN junction enables the detector to accurately measure and detect electromagnetic radiation.
- Enhanced sensitivity: The improved junction increases the sensitivity of the detector, allowing for the detection of even low levels of radiation.
- Higher performance: The technology overcomes performance limitations of existing detectors, resulting in better efficiency and reliability.
- Versatile applications: The detector can be utilized in various fields, including medical imaging, security screening, and environmental monitoring.
Original Abstract Submitted
An electromagnetic radiation detector includes a PN junction between two group III-V semiconductor materials. The PN junction is defined by in-situ doping of the layers to improve the quality of the junction and the performance of the electromagnetic radiation detector.
