MICRO LIGHT-EMITTING DIODE DEVICE

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MICRO LIGHT-EMITTING DIODE DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18182388 titled 'MICRO LIGHT-EMITTING DIODE DEVICE

The abstract describes a micro light-emitting diode device with specific layers and electrodes for efficient light emission.

The device includes a substrate, a micro light-emitting diode, an isolation layer, and a cathode transparent electrode.
The micro light-emitting diode consists of p-type III-nitride layer, n-type III-nitride layers stacked above the p-type layer, and an active layer between them.
The top layer and the next layer of the n-type III-nitride layers contain aluminum.
The isolation layer surrounds the micro light-emitting diode on the substrate.
The cathode transparent electrode is in contact with the top layer and has a lower refractive index than the next layer.

Potential Applications: - Display technology - Lighting applications - Optical communication systems

Problems Solved: - Enhanced light emission efficiency - Improved durability and performance of light-emitting diodes

Benefits: - Higher brightness and energy efficiency - Longer lifespan of the device - Better overall performance in various applications

Commercial Applications: Title: Advanced Micro LED Technology for High-Performance Displays This technology can be used in high-resolution displays, smart lighting systems, and optical communication devices, leading to improved visual experiences and energy savings in commercial and consumer electronics.

Questions about Micro LED Technology: 1. How does the use of III-nitride layers contribute to the efficiency of the micro light-emitting diode? 2. What are the specific advantages of having a cathode transparent electrode with a lower refractive index in this device?

Original Abstract Submitted

A micro light-emitting diode device includes a substrate, a micro light-emitting diode, an isolation layer, and a cathode transparent electrode. The micro light-emitting diode is disposed on the substrate and includes a p-type III-nitride layer, n-type Ill-nitride layers with a layer number of m sequentially stacked above the p-type III-nitride layer, and an active layer between the p-type Ill-nitride layer and the n-type III-nitride layers. m is an integer greater than two. A top layer and a next layer in contact with each other of the n-type III-nitride layers contain aluminum. The isolation layer is on the substrate and surrounds the micro light-emitting diode. The cathode transparent electrode is at least partially in contact with a top surface of the top layer. A refractive index of the top layer is smaller than a refractive index of the next layer.