SEMICONDUCTOR DEVICE

Organization Name

Samsung Electronics Co., Ltd.

Inventor(s)

Sangho Lee of Suwon-si (KR)

Moonyoung Jeong of Suwon-si (KR)

Hyungjun Noh of Suwon-si (KR)

SEMICONDUCTOR DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18178401 titled 'SEMICONDUCTOR DEVICE

Simplified Explanation

The abstract describes a semiconductor device that includes a vertical pattern with two source/drain regions and a vertical channel region between them. The device also has a gate structure on one side of the vertical pattern and a back gate structure on the opposite side. The gate structure includes a gate electrode and a gate dielectric layer, while the back gate structure includes a back gate electrode and a dielectric structure with an air gap.

The semiconductor device has a vertical pattern with two source/drain regions and a vertical channel region, allowing for efficient current flow.
The gate structure and back gate structure provide control over the flow of current through the device.
The gate structure includes a gate electrode and a gate dielectric layer, which help in controlling the flow of current.
The back gate structure includes a back gate electrode and a dielectric structure with an air gap, which further enhance the control over current flow.
The use of an air gap in the dielectric structure helps in reducing interference and improving the performance of the device.

Potential applications of this technology:

This semiconductor device can be used in various electronic devices, such as smartphones, tablets, and computers.
It can be used in power management circuits, memory devices, and logic circuits.

Problems solved by this technology:

The vertical pattern and the gate/back gate structures provide better control over current flow, leading to improved device performance.
The use of an air gap in the dielectric structure helps in reducing interference and enhancing the efficiency of the device.

Benefits of this technology:

The semiconductor device offers improved performance and efficiency compared to conventional devices.
It allows for better control over current flow, leading to enhanced functionality and reliability.
The use of an air gap in the dielectric structure helps in reducing interference and improving signal integrity.

Original Abstract Submitted

A semiconductor device includes a vertical pattern including a first source/drain region, a second source/drain region having a height higher than a height of the first source/drain region, and a vertical channel region between the first and second source/drain regions, a gate structure facing a first side surface of the vertical pattern, and a back gate structure facing a second side surface, opposite to the first side surface of the vertical pattern. The gate structure includes a gate electrode on the first side surface of the vertical pattern, and a gate dielectric layer including a portion disposed between the vertical pattern and the gate electrode. The back gate structure includes a back gate electrode on the second side surface of the vertical pattern, and a dielectric structure including a portion disposed between the vertical pattern and the back gate electrode. The dielectric structure includes an air gap.