SEMICONDUCTOR MEMORY DEVICE

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Inventor(s)

SEMICONDUCTOR MEMORY DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18177063 titled 'SEMICONDUCTOR MEMORY DEVICE

Simplified Explanation

The abstract describes a semiconductor memory device that includes various components such as a circuit region, a guard ring line, an element isolation region, and a dummy transistor.

The semiconductor memory device is built on a semiconductor substrate with a surface extending in the X and Y directions.
The circuit region is formed on the semiconductor substrate and has at least one side extending in the Y direction.
A guard ring line is present, extending along the Y direction and opposing one side of the circuit region in the X direction.
An element isolation region is formed between the one side of the circuit region and the guard ring line, extending along the Y direction.
A dummy transistor is placed on the upper surface of the element isolation region.
The dummy transistor consists of a main interconnection that extends in the Y direction and a branch interconnection that extends from the main interconnection in the X direction.

Potential applications of this technology:

Semiconductor memory devices are widely used in various electronic devices such as computers, smartphones, and tablets.
This innovation can improve the performance and efficiency of semiconductor memory devices, leading to better overall performance in electronic devices.

Problems solved by this technology:

The presence of the guard ring line and element isolation region helps in isolating and protecting the circuit region from external interference or noise.
The dummy transistor can assist in optimizing the layout and design of the semiconductor memory device, improving its overall functionality.

Benefits of this technology:

The guard ring line and element isolation region enhance the reliability and stability of the circuit region, reducing the chances of errors or malfunctions.
The dummy transistor aids in improving the performance and efficiency of the semiconductor memory device, resulting in faster data access and processing speeds.

Original Abstract Submitted

A semiconductor memory device includes: a semiconductor substrate having a surface extending in an X direction and a Y direction; a circuit region formed on the semiconductor substrate and having at least one side extending in the Y direction; a guard ring line extending along the Y direction and opposed to the one side of the circuit region in the X direction; an element isolation region extending along the Y direction and formed between the one side of the circuit region and the guard ring line; and a dummy transistor disposed on an upper surface of the element isolation region. The dummy transistor includes: a main interconnection extending in the Y direction; and a branch interconnection extending from the main interconnection in the X direction.