18167301. SEMICONDUCTOR DEVICE simplified abstract (TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION)

SEMICONDUCTOR DEVICE

Organization Name

TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION

Inventor(s)

Toru Sugiyama of Musashino Tokyo (JP)

Noriaki Yoshikawa of Inagi Tokyo (JP)

Yasuhiko Kuriyama of Yokohama Kanagawa (JP)

Akira Yoshioka of Yokohama Kanagawa (JP)

Hitoshi Kobayashi of Yamato Kanagawa (JP)

Hung Hung of Kawasaki Kanagawa (JP)

Yasuhiro Isobe of Ota Tokyo (JP)

Tetsuya Ohno of Yokohama Kanagawa (JP)

Hideki Sekiguchi of Yokohama Kanagawa (JP)

Masaaki Onomura of Setagaya Tokyo (JP)

SEMICONDUCTOR DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18167301 titled 'SEMICONDUCTOR DEVICE

Simplified Explanation

The semiconductor device described in the abstract consists of a first transistor, a first drive circuit with a second transistor, and a second drive circuit with a third transistor. The second and third transistors are connected in series, with a connection node of the two transistors linked to a gate electrode of the first transistor. All three transistors are normally-off MOS HEMTs made in a substrate containing GaN. The first drive circuit charges the parasitic capacitance of the first transistor, while the second drive circuit discharges it.

• First transistor, second transistor, and third transistor are normally-off MOS HEMTs.
• First substrate includes GaN.
• First drive circuit charges parasitic capacitance of first transistor.
• Second drive circuit discharges parasitic capacitance of first transistor.

Potential Applications

This technology could be applied in:

• Power electronics
• RF amplifiers
• Wireless communication systems

Problems Solved

This technology helps in:

• Improving efficiency in power electronics
• Enhancing performance in RF amplifiers
• Increasing data transmission speeds in wireless communication systems

Benefits

The benefits of this technology include:

• Higher efficiency
• Improved performance
• Faster data transmission

Potential Commercial Applications

This technology could be commercially benefit:

• Telecommunications industry
• Electronics manufacturing sector
• Aerospace and defense industry

Possible Prior Art

One possible prior art for this technology could be the use of GaN in semiconductor devices for improved performance and efficiency.

Unanswered Questions

How does this technology compare to traditional silicon-based transistors in terms of performance and efficiency?

This article does not provide a direct comparison between this technology and traditional silicon-based transistors. Further research or testing may be needed to determine the advantages and disadvantages of each.

Are there any limitations or drawbacks to using GaN in semiconductor devices?

The article does not mention any limitations or drawbacks of using GaN in semiconductor devices. Additional studies or experiments may be required to identify any potential challenges associated with this material.

Original Abstract Submitted

A semiconductor device includes a first transistor, a first drive circuit including a second transistor, and a second drive circuit including a third transistor. The second transistor and the third transistor are connected in series; and a connection node of the second and third transistors is connected to a gate electrode of the first transistor. The first transistor, the second transistor, and the third transistor are normally-off MOS HEMTs formed in a first substrate that includes GaN. The first drive circuit charges a parasitic capacitance of the first transistor. The second drive circuit discharges the parasitic capacitance of the first transistor.