18156900. Plasma Etching with Metal Sputtering simplified abstract (Tokyo Electron Limited)
Plasma Etching with Metal Sputtering
Organization Name
Inventor(s)
Minjoon Park of Albany NY (US)
Plasma Etching with Metal Sputtering - A simplified explanation of the abstract
This abstract first appeared for US patent application 18156900 titled 'Plasma Etching with Metal Sputtering
The method described in the patent application involves etching a substrate in a plasma etch chamber that contains a patterned hard mask layer and an underlying layer.
- Loading the substrate into the plasma etch chamber
- Flowing a process gas with fluorine and carbon into the chamber
- Applying a source power to generate a plasma
- Etching the underlying layer by sputtering refractory metal from the chamber part
- Forming a recess in the underlying layer and a conductive polymer layer over the sidewalls
Potential Applications: - Semiconductor manufacturing - Microelectronics industry - Nanotechnology research
Problems Solved: - Precise etching of substrates with complex layers - Enhancing the performance of electronic devices
Benefits: - Improved precision in etching processes - Enhanced conductivity in electronic components - Increased efficiency in manufacturing processes
Commercial Applications: Title: Advanced Plasma Etching Technology for Semiconductor Manufacturing This technology can be used in the production of microchips, sensors, and other electronic devices, leading to faster and more reliable products in the market.
Questions about Plasma Etching Technology: 1. How does this method improve the efficiency of semiconductor manufacturing processes?
- This method allows for precise etching of complex layers, leading to enhanced performance of electronic devices.
2. What are the potential cost savings associated with implementing this technology in semiconductor fabrication?
- The improved efficiency and precision of the etching process can lead to reduced waste and increased yield, resulting in cost savings for manufacturers.
Original Abstract Submitted
A method of etching a substrate that includes: loading the substrate into a plasma etch chamber, the substrate including a patterned hard mask layer and an underlying layer, the plasma etch chamber including a chamber part having a surface including a refractory metal, and a first electrode; flowing a process gas including fluorine and carbon into the plasma etch chamber; applying a source power to the first electrode of the plasma etch chamber to generate a plasma in the plasma etch chamber; and etching the underlying layer, the etching including exposing the surface of the chamber part to the plasma to sputter the refractory metal from the surface of the chamber part, and forming a recess in the underlying layer and a conductive polymer layer including the refractory metal over sidewalls of the patterned hard mask layer and the underlying layer, the forming including exposing the substrate to the plasma.
