TRANSISTOR GATE STACK FORMATION

Organization Name

INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor(s)

HUIMEI Zhou of Albany NY (US)

Andrew Gaul of Halfmoon NY (US)

Nicolas Jean Loubet of GUILDERLAND NY (US)

MIAOMIAO Wang of Albany NY (US)

TRANSISTOR GATE STACK FORMATION - A simplified explanation of the abstract

This abstract first appeared for US patent application 18152790 titled 'TRANSISTOR GATE STACK FORMATION

The abstract describes a method for forming a gate structure of a transistor, involving several steps such as forming a channel region, applying a high-k dielectric layer, and subjecting the structure to a thermal anneal process.

Forming a channel region of the gate structure
Applying a high-k dielectric layer and a silicon monolayer
Adding sacrificial metal and silicon layers
Thermal annealing to transform the silicon monolayer
Removing sacrificial layers and forming a gate metal around the channel region

Potential Applications: - Semiconductor manufacturing - Electronics industry - Integrated circuits

Problems Solved: - Enhancing transistor performance - Improving gate structure reliability - Increasing efficiency of semiconductor devices

Benefits: - Higher performance transistors - Enhanced reliability of gate structures - Improved efficiency in semiconductor devices

Commercial Applications: - Production of advanced transistors - Development of high-performance electronic devices - Implementation in integrated circuits for various applications

Prior Art: Prior research on gate structure formation in transistors, high-k dielectric materials, and thermal annealing processes can provide valuable insights into this technology.

Frequently Updated Research: Ongoing studies on novel materials for gate structures, advanced semiconductor manufacturing techniques, and optimization of transistor performance are relevant to this technology.

Questions about Gate Structure Formation: 1. How does the use of a high-k dielectric layer impact the performance of the transistor? 2. What are the potential challenges in scaling up this method for mass production?

Original Abstract Submitted

Embodiments of present invention provide a method of forming a gate structure of a transistor. The method includes forming a channel region of the gate structure; forming a high-k dielectric layer covering the channel region; forming a silicon monolayer covering the high-k dielectric layer; forming a sacrificial metal layer covering the silicon monolayer; forming a sacrificial silicon layer covering the sacrificial metal layer; subjecting the gate structure to a thermal anneal process, thereby transforming the silicon monolayer into a nitrogen-containing monolayer; removing the sacrificial silicon layer and the sacrificial metal layer; and forming a gate metal surrounding the channel region of the gate structure. A gate structure formed thereby is also provided.