18140523. SINGULATED SEMICONDUCTOR DEVICES AND ASSOCIATED METHODS simplified abstract (Micron Technology, Inc.)

SINGULATED SEMICONDUCTOR DEVICES AND ASSOCIATED METHODS

Organization Name

Micron Technology, Inc.

Inventor(s)

Marc Anthony Romana De Guzman of Singapore (SG)

Aibin Yu of Singapore (SG)

Bee Sei Soh of Singapore (SG)

SINGULATED SEMICONDUCTOR DEVICES AND ASSOCIATED METHODS - A simplified explanation of the abstract

This abstract first appeared for US patent application 18140523 titled 'SINGULATED SEMICONDUCTOR DEVICES AND ASSOCIATED METHODS

Simplified Explanation

A semiconductor device is described in this patent application. It involves a semiconductor substrate that is separated from a device wafer containing multiple semiconductor devices. The substrate has a first corner and two sidewalls extending from the corner in different directions.

• The first sidewall has a laser modification along its direction.
• The second sidewall also has a laser modification along its direction.
• The portion of the second sidewall between the first corner and the second laser modification can either have no laser modification or the second laser modification can be offset from the first corner.

Potential Applications:

• Semiconductor manufacturing
• Electronics industry

Problems Solved:

• Efficient singulation of semiconductor substrates from device wafers
• Precise laser modifications on sidewalls

Benefits:

• Improved accuracy and control in semiconductor device manufacturing
• Enhanced performance and reliability of semiconductor devices

Original Abstract Submitted

A semiconductor device can include a semiconductor substrate singulated from a device wafer having had multiple semiconductor devices formed thereon. The semiconductor substrate can include a first corner, a first sidewall extends in a first direction from the first corner, and a second sidewall extending in a second direction from the first corner. The first sidewall can include a first laser modification extending along the first direction and the second sidewall can include a second laser modification extending along the second direction. A portion of the second sidewall between the first corner and the second laser modification can (i) exclude laser modification, or (ii) the second laser modification can be offset from the first corner along the second direction.