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18136448. PLASMA PROCESSING APPARATUS simplified abstract (Samsung Electronics Co., Ltd.)

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PLASMA PROCESSING APPARATUS

Organization Name

Samsung Electronics Co., Ltd.

Inventor(s)

Yunhwan Kim of Suwon-si (KR)

Dougyong Sung of Suwon-si (KR)

Namkyun Kim of Suwon-si (KR)

Minsung Kim of Suwon-si (KR)

Youngjin Noh of Suwon-si (KR)

PLASMA PROCESSING APPARATUS - A simplified explanation of the abstract

This abstract first appeared for US patent application 18136448 titled 'PLASMA PROCESSING APPARATUS

Simplified Explanation

The abstract describes a plasma processing apparatus that includes a process chamber, an electrostatic chuck, a lower electrode, a high-frequency power supply, a conductive supporter, and a discharge suppressor. The discharge suppressor is molded by three-dimensional printing and has a gas supply flow path with a space portion of 5 mm or less.

  • The plasma processing apparatus is used for performing substrate processing processes.
  • The electrostatic chuck has a microcavity and is in contact with the lower electrode.
  • The high-frequency power supply applies high-frequency power to the lower electrode.
  • The conductive supporter is grounded to the lower electrode and is spaced apart from it.
  • The discharge suppressor is located between the lower electrode and the conductive supporter.
  • The discharge suppressor is molded by three-dimensional printing.
  • The gas supply flow path in the discharge suppressor forms a portion of a gas supply line.
  • The gas supply flow path has a space portion that connects the upper and lower surfaces of the discharge suppressor and has a length of 5 mm or less in the direction of the electric field formed by the high-frequency power.

Potential Applications

  • Plasma processing of substrates in various industries such as semiconductor manufacturing, display panel production, and solar cell production.

Problems Solved

  • The discharge suppressor helps to prevent unwanted discharges during the plasma processing process.
  • The use of three-dimensional printing allows for the creation of complex and precise gas supply flow paths.

Benefits

  • Improved plasma processing efficiency and quality.
  • Enhanced control over discharges during the process.
  • Cost-effective manufacturing of the discharge suppressor through three-dimensional printing.


Original Abstract Submitted

A plasma processing apparatus includes a process chamber in which a substrate processing process is performed; an electrostatic chuck having a microcavity; a lower electrode disposed to be in contact with a lower surface of the electrostatic chuck; a high-frequency power supply applying high-frequency power to the lower electrode; a conductive supporter disposed to be spaced apart from a lower portion of the lower electrode and grounded thereto; and a discharge suppressor located between the lower electrode and the conductive supporter, having a gas supply flow path forming a portion of a gas supply line, and molded by three dimensional printing, wherein the gas supply flow path has a space portion having a length of 5 mm or less in a direction of an electric field formed by the high-frequency power and connecting upper and lower surfaces of the discharge suppressor.

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