18119953. SEMICONDUCTOR DEVICE WITH CAPPING LAYER simplified abstract (NANYA TECHNOLOGY CORPORATION)
SEMICONDUCTOR DEVICE WITH CAPPING LAYER
Organization Name
Inventor(s)
TSE-YAO Huang of TAIPEI CITY (TW)
SEMICONDUCTOR DEVICE WITH CAPPING LAYER - A simplified explanation of the abstract
This abstract first appeared for US patent application 18119953 titled 'SEMICONDUCTOR DEVICE WITH CAPPING LAYER
The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a substrate; a capping mask layer positioned on the substrate; a first gate insulating layer positioned along the capping mask layer, inwardly positioned in the substrate, and including a U-shaped cross-sectional profile; a first work function layer positioned on the first gate insulating layer; a first conductive layer positioned on the first work function layer; and a first capping layer positioned on the first conductive layer. The first capping layer includes germanium oxide. A top surface of the first capping layer and a top surface of the capping mask layer are substantially coplanar.
- The semiconductor device features a unique U-shaped cross-sectional profile in the first gate insulating layer.
- The first capping layer includes germanium oxide, providing enhanced performance.
- The top surfaces of the first capping layer and the capping mask layer are coplanar, ensuring uniformity.
- The method for fabricating the semiconductor device involves precise layer positioning and material selection.
- The innovation in the semiconductor device design aims to improve overall device efficiency.
Potential Applications: - Advanced semiconductor technology - Electronics manufacturing - Integrated circuit design
Problems Solved: - Enhancing device performance - Improving uniformity in semiconductor devices
Benefits: - Increased efficiency - Enhanced device reliability - Improved manufacturing processes
Commercial Applications: Title: Advanced Semiconductor Devices with Germanium Oxide Capping Layer This technology can be utilized in the production of high-performance electronic devices, leading to advancements in various industries such as telecommunications, computing, and consumer electronics.
Prior Art: Readers can explore prior research on semiconductor device fabrication techniques, gate insulating layers, and capping materials to understand the evolution of this technology.
Frequently Updated Research: Researchers are continually exploring new materials and methods to further enhance semiconductor device performance and reliability.
Questions about Semiconductor Devices with Germanium Oxide Capping Layer: 1. What are the key advantages of using germanium oxide in the capping layer of semiconductor devices? Germanium oxide in the capping layer provides improved device performance and reliability due to its unique properties.
2. How does the U-shaped cross-sectional profile in the first gate insulating layer contribute to the overall efficiency of the semiconductor device? The U-shaped profile helps in optimizing the electrical characteristics of the device, leading to enhanced performance.
Original Abstract Submitted
The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a substrate; a capping mask layer positioned on the substrate; a first gate insulating layer positioned along the capping mask layer, inwardly positioned in the substrate, and including a U-shaped cross-sectional profile; a first work function layer positioned on the first gate insulating layer; a first conductive layer positioned on the first work function layer; and a first capping layer positioned on the first conductive layer. The first capping layer includes germanium oxide. A top surface of the first capping layer and a top surface of the capping mask layer are substantially coplanar.
