18118017. HYDROGEN PLASMA TREATMENT FOR FORMING LOGIC DEVICES simplified abstract (Applied Materials, Inc.)

HYDROGEN PLASMA TREATMENT FOR FORMING LOGIC DEVICES

Organization Name

Applied Materials, Inc.

Inventor(s)

Tsung-Han Yang of San Jose CA (US)

Zhen Liu of Santa Clara CA (US)

Yongqian Gao of Sunnyvale CA (US)

Michael S. Jackson of Sunnyvale CA (US)

Rongjun Wang of Dublin CA (US)

HYDROGEN PLASMA TREATMENT FOR FORMING LOGIC DEVICES - A simplified explanation of the abstract

This abstract first appeared for US patent application 18118017 titled 'HYDROGEN PLASMA TREATMENT FOR FORMING LOGIC DEVICES

Simplified Explanation

The patent application describes a method of using hydrogen plasma treatment to promote selective deposition in semiconductor device structures.

• The method involves forming a metal layer within features on the semiconductor device structure.
• The metal layer is exposed to a hydrogen plasma treatment, which preferentially treats the top field and sidewalls while leaving the bottom surface untreated.
• This treatment encourages bottom-up metal film growth by utilizing hydrogen ions.

Key Features and Innovation

• Utilization of hydrogen plasma treatment for selective deposition in semiconductor device structures.
• Encouraging bottom-up metal film growth by preferentially treating the top field and sidewalls with hydrogen ions.

Potential Applications

• Semiconductor manufacturing processes.
• Integrated circuit fabrication.
• Nanotechnology applications.

Problems Solved

• Enhancing the efficiency and precision of metal film growth in semiconductor device structures.
• Improving the performance and reliability of semiconductor devices.

Benefits

• Increased control over metal deposition processes.
• Enhanced device performance and longevity.
• Cost-effective manufacturing solutions.

Commercial Applications

• Title: "Hydrogen Plasma Treatment for Selective Deposition in Semiconductor Manufacturing"
• This technology can be applied in the production of various semiconductor devices, leading to improved performance and reliability.
• Market implications include increased demand for advanced semiconductor manufacturing techniques.

Prior Art

Further research can be conducted in the field of hydrogen plasma treatment for selective deposition in semiconductor device structures to explore existing technologies and innovations.

Frequently Updated Research

Stay updated on advancements in hydrogen plasma treatment for semiconductor manufacturing processes to enhance the efficiency and precision of metal film growth.

Questions about Hydrogen Plasma Treatment for Selective Deposition

What are the potential drawbacks of using hydrogen plasma treatment in semiconductor device fabrication?

Hydrogen plasma treatment may introduce contamination or alter the properties of the semiconductor materials, affecting device performance.

How does hydrogen plasma treatment compare to other methods of selective deposition in semiconductor manufacturing?

Hydrogen plasma treatment offers a unique approach to promoting selective deposition by utilizing hydrogen ions to encourage bottom-up metal film growth.

Original Abstract Submitted

A method of forming a semiconductor device structure by utilizing a hydrogen plasma treatment to promote selective deposition is disclosed. In some embodiments, the method includes forming a metal layer within at least one feature on the semiconductor device structure. The method includes exposing the metal layer to a hydrogen plasma treatment. The hydrogen plasma treatment preferentially treats the top field and sidewalls while leaving the bottom surface substantially untreated to encourage bottom up metal film growth. In some embodiments, the hydrogen plasma treatment comprises substantially only hydrogen ions.