SEMICONDUCTOR DEVICE

Organization Name

SAMSUNG ELECTRONICS CO., LTD.

Inventor(s)

Jungmin Park of Suwon-si (KR)

Hanjin Lim of Suwon-si (KR)

Hyungsuk Jung of Suwon-si (KR)

SEMICONDUCTOR DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18116071 titled 'SEMICONDUCTOR DEVICE

Simplified Explanation

The abstract describes a semiconductor device that includes a substrate, a lower electrode, a support, a dielectric layer, and an upper electrode. The lower electrode has a base electrode layer containing a halogen element and an insertion layer containing carbon. The insertion layer is inserted in a portion of the lower electrode adjacent to the support and the dielectric layer.

The lower electrode of the semiconductor device includes a base electrode layer and an insertion layer.
The base electrode layer contains a halogen element.
The insertion layer contains carbon.
The insertion layer is inserted in a portion of the lower electrode.
The portion of the lower electrode is adjacent to the support and the dielectric layer.

Potential applications of this technology:

Semiconductor devices using this structure can be used in various electronic devices such as computers, smartphones, and tablets.
This technology can be applied in memory devices, logic circuits, and other integrated circuits.

Problems solved by this technology:

The insertion layer containing carbon helps improve the performance and reliability of the semiconductor device.
The use of a halogen element in the base electrode layer enhances the electrical properties of the lower electrode.

Benefits of this technology:

The semiconductor device with this structure exhibits improved performance and reliability.
The use of a halogen element and carbon in the lower electrode provides enhanced electrical properties.
This technology enables the fabrication of more efficient and advanced semiconductor devices.

Original Abstract Submitted

A semiconductor device includes a substrate, a lower electrode above the substrate, the lower electrode extending in a vertical direction, a support surrounding a side wall of the lower electrode and supporting the lower electrode, a dielectric layer on the lower electrode and the support, and an upper electrode on the dielectric layer, wherein the lower electrode includes a base electrode layer and an insertion layer, the base electrode layer containing a halogen element, and the insertion layer containing carbon, and the insertion layer is inserted in a portion of the lower electrode, the portion of the lower electrode being adjacent to the support and the dielectric layer.