18100326. ADJUSTABLE CROSS-FLOW PROCESS CHAMBER LID simplified abstract (Applied Materials, Inc.)
ADJUSTABLE CROSS-FLOW PROCESS CHAMBER LID
Organization Name
Inventor(s)
Muhannad Mustafa of Milpitas CA (US)
Sanjeev Baluja of Campbell CA (US)
ADJUSTABLE CROSS-FLOW PROCESS CHAMBER LID - A simplified explanation of the abstract
This abstract first appeared for US patent application 18100326 titled 'ADJUSTABLE CROSS-FLOW PROCESS CHAMBER LID
The patent application describes apparatus and methods for improving deposition uniformity in a cross-flow processing chamber.
- A precursor inlet allows a cross-flow of precursor from one side of the lid to the exhaust side opposite the center of the lid.
- At least one purge gas inlet is in fluid communication with a purge gas channel, providing gas flow to the center of the substrate in the chamber.
Potential Applications:
- Semiconductor manufacturing
- Thin film deposition processes
- Solar cell production
Problems Solved:
- Uneven deposition on substrates
- Inefficient use of precursor gases
- Lack of control over gas flow distribution
Benefits:
- Enhanced deposition uniformity
- Improved efficiency in material usage
- Precise control over gas flow distribution
Commercial Applications:
- Advanced semiconductor fabrication
- High-tech coatings for optical devices
- Next-generation solar panel manufacturing
Questions about the technology: 1. How does this technology compare to traditional deposition methods?
- This technology offers improved control and uniformity in the deposition process compared to traditional methods.
2. What are the key factors influencing the effectiveness of gas flow distribution in this system?
- Factors such as pressure, temperature, and flow rate play a crucial role in ensuring optimal gas flow distribution.
Original Abstract Submitted
Apparatus and methods for improving deposition uniformity in a cross-flow processing chamber are described. A precursor inlet is configured to allow a cross-flow of precursor from the precursor inlet side of the lid to an exhaust side of the lid opposite a center of the lid from the precursor inlet side. At least one purge gas inlet is in fluid communication with a purge gas channel, the purge gas channel having at least one opening aligned to provide a flow of gas to a center of a substrate in the cross-flow process chamber.
