WRONG WAY READ-BEFORE WRITE SOLUTIONS IN SRAM

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WRONG WAY READ-BEFORE WRITE SOLUTIONS IN SRAM - A simplified explanation of the abstract

This abstract first appeared for US patent application 18090736 titled 'WRONG WAY READ-BEFORE WRITE SOLUTIONS IN SRAM

The abstract describes a patent application for a static random-access memory (SRAM) circuit that includes various components such as an SRAM bitcell, word line, bit line, complementary bit line, precharge circuit, keeper transistors, write driver circuit, and combinatorial logic circuit.

SRAM circuit with an SRAM bitcell, word line, bit line, and complementary bit line
Precharge circuit with precharge input for the bit line and complementary bit line
Keeper transistors (first and second) coupled to the bit line and complementary bit line
Write driver circuit with select input, write data input, and write data compliment input for writing data to the SRAM bitcell
Combinatorial logic circuit providing a precharge signal based on select signal and bit line precharge signal

Potential Applications: - Integrated circuits - Memory storage devices - Computer processors

Problems Solved: - Efficient data storage and retrieval in electronic devices - Improved performance of memory circuits

Benefits: - Faster data access times - Reduced power consumption - Enhanced overall system performance

Commercial Applications: Title: "Innovative SRAM Circuit for Enhanced Memory Performance" This technology can be used in various commercial applications such as: - Consumer electronics - Automotive electronics - Industrial automation systems

Questions about SRAM circuits: 1. How does the precharge circuit improve the performance of the SRAM circuit? The precharge circuit ensures that the bit line and complementary bit line are precharged, reducing access times and improving overall efficiency.

2. What role do the keeper transistors play in the SRAM circuit? The keeper transistors help maintain the stability of the stored data in the SRAM bitcell by holding the bit line and complementary bit line at the correct voltage levels.

Original Abstract Submitted

A static random-access memory (SRAM) circuit includes an SRAM bitcell coupled to a word line, a bit line and a complementary bit line. A precharge circuit is coupled to the bit line and the complementary bit line and includes a precharge input. A first keeper transistor is coupled to the bit line and a second keeper transistor is coupled to the complementary bit line. A write driver circuit includes a select input receiving a select signal, a write data input, and a write data compliment input, and is operable to write a data bit to the SRAM bitcell. A combinatorial logic circuit provides a precharge signal to the precharge circuit based on the select signal and a bit line precharge signal.