MEMORY DEVICE

Organization Name

Inventor(s)

MEMORY DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18061827 titled 'MEMORY DEVICE

Simplified Explanation

The abstract describes a patent application for a circuit configuration involving multiple transistors and inverters. Here is a simplified explanation of the abstract:

The circuit includes two inverters, each consisting of two transistors.
The third and fourth nodes are connected to the second and third transistors of the first and second inverters, respectively.
A sixth transistor is placed between the gate of the fifth transistor and the third node.
A seventh transistor is placed between the gate of the third transistor and the fourth node.
An eighth transistor is placed between the gate of the third transistor and the third node.
A ninth transistor is placed between the gate of the fifth transistor and the fourth node.
The gates of the eighth and ninth transistors experience a decrease in voltage at a specific time.
A state is formed with specific voltages applied to the first and second nodes of the first and second inverters at a different time.
The voltage of the sixth and seventh transistors' gates increases between the first and second times.

Potential applications of this technology:

Integrated circuits and semiconductor devices
Digital logic circuits
Power management systems
Signal processing circuits

Problems solved by this technology:

Efficient control of voltage levels in a circuit
Improved performance and reliability of inverters
Reduction of power consumption
Enhanced signal processing capabilities

Benefits of this technology:

Higher efficiency and reliability in circuit operation
Lower power consumption and energy savings
Improved signal processing accuracy and speed
Increased flexibility in circuit design and integration

Original Abstract Submitted

A first inverter includes second and third transistors coupled at a third node. A second inverter includes fourth and fifth transistors coupled at a fourth node. A sixth transistor is between the fifth transistor's gate and the third node. A seventh transistor is between the third transistor's gate and the fourth node. An eighth transistor is between the third transistor's gate and the third node. A ninth transistor is between the fifth transistor's gate and the fourth node. A voltage of the eighth and ninth transistors' gates lowers at a first time. A state is formed with voltages applied to first and second nodes of the first and second inverters at a second time. A voltage of the sixth and seventh transistors' gates rises between the first and second times.