18034343. DISPLAY DEVICE AND METHOD FOR MANUFACTURING DISPLAY DEVICE simplified abstract (SHARP KABUSHIKI KAISHA)
DISPLAY DEVICE AND METHOD FOR MANUFACTURING DISPLAY DEVICE
Organization Name
Inventor(s)
TAMOTSU Sakai of Sakai City, Osaka (JP)
DISPLAY DEVICE AND METHOD FOR MANUFACTURING DISPLAY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18034343 titled 'DISPLAY DEVICE AND METHOD FOR MANUFACTURING DISPLAY DEVICE
Simplified Explanation
The patent application describes a semiconductor layer in a drive transistor that allows a drive current to flow in a light emission period of a light-emitting element.
- The semiconductor layer includes a first channel region, a first doped region, and a second doped region.
- The first doped region is a high concentration region adjacent to the first channel region.
- The second doped region is a low concentration region adjacent to the first channel region and a high concentration region adjacent to the low concentration region.
Key Features and Innovation
- Semiconductor layer design in a drive transistor for efficient light emission.
- Utilization of high and low concentration doped regions to control drive current flow.
Potential Applications
This technology can be applied in the development of high-performance light-emitting devices, such as LED displays and lighting systems.
Problems Solved
- Efficient control of drive current flow in light-emitting elements.
- Enhanced performance and brightness of light-emitting devices.
Benefits
- Improved efficiency in light emission.
- Enhanced brightness and performance of light-emitting devices.
Commercial Applications
Title: Advanced Semiconductor Technology for Light-Emitting Devices This technology can be commercially utilized in the production of LED displays, lighting systems for commercial and residential use, and other applications requiring high-performance light emission.
Questions about Semiconductor Layer Design
1. How does the semiconductor layer design impact the efficiency of light emission in the drive transistor?
The semiconductor layer design, with high and low concentration doped regions, allows for precise control of drive current flow, resulting in efficient light emission in the light-emitting element.
2. What are the potential advantages of using high and low concentration doped regions in the semiconductor layer of a drive transistor?
The use of high and low concentration doped regions enables better control over drive current flow, leading to improved performance and brightness in light-emitting devices.
Original Abstract Submitted
A semiconductor layer of a drive transistor includes a first channel region, and a first doped region and a second doped region that are doped with an impurity, the first doped region adjacent to the first channel region is constituted by a high concentration region, and the second doped region is constituted by a low concentration region adjacent to the first channel region and a high concentration region adjacent to the low concentration region, and a drive current flows from the first doped region to the second doped region in a light emission period of a light-emitting element.
