18021863. DISPLAY SUBSTRATE AND DISPLAY DEVICE simplified abstract (BOE Technology Group Co., Ltd.)
DISPLAY SUBSTRATE AND DISPLAY DEVICE
Organization Name
BOE Technology Group Co., Ltd.
Inventor(s)
DISPLAY SUBSTRATE AND DISPLAY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18021863 titled 'DISPLAY SUBSTRATE AND DISPLAY DEVICE
Simplified Explanation:
The patent application describes a display substrate with low-temperature poly-silicon thin film transistors and metal oxide thin film transistors.
Key Features and Innovation:
- Display substrate with low-temperature poly-silicon thin film transistors and metal oxide thin film transistors.
- Low-temperature poly-silicon thin film transistor includes semiconductor layer, gate insulating layer, gate electrode, interlayer insulating layer, source electrode, and drain electrode.
- Metal oxide thin film transistor includes metal oxide semiconductor layer, gate insulating layer, gate electrode, interlayer insulating layer, passivation layer, source electrode, and drain electrode.
- Second source electrode is close to the base substrate, while the second drain electrode is away from the base substrate.
Potential Applications: This technology can be used in various display devices such as smartphones, tablets, and televisions.
Problems Solved: This technology addresses the need for high-performance and efficient display substrates in electronic devices.
Benefits: The benefits of this technology include improved display quality, energy efficiency, and overall performance of electronic devices.
Commercial Applications: Potential commercial applications include the manufacturing of high-quality displays for consumer electronics, leading to enhanced viewing experiences for users.
Questions about Display Substrate Technology: 1. How does the integration of low-temperature poly-silicon thin film transistors and metal oxide thin film transistors improve display performance? 2. What are the specific advantages of using metal oxide thin film transistors in display substrates?
Original Abstract Submitted
A display substrate and a display device are provided. The display substrate includes: a base substrate, and a low temperature poly-silicon thin film transistor and a metal oxide thin film transistor on the base substrate; the low temperature poly-silicon thin film transistor includes: a low temperature poly-silicon semiconductor layer, a first gate insulating layer, a first gate electrode, a first interlayer insulating layer, a first source electrode, and a first drain electrode; the metal oxide thin film transistor includes: a metal oxide semiconductor layer, a second gate insulating layer, a second gate electrode, a second interlayer insulating layer, a passivation layer, a second source electrode, and a second drain electrode; the second source electrode is on a side of the metal oxide semiconductor layer close to the base substrate; and the second drain electrode is on a side of the metal oxide semiconductor layer away from the base substrate.
