17994009. FLASH MEMORY AND MANUFACTURING METHOD THEREOF simplified abstract (UNITED MICROELECTRONICS CORP.)
FLASH MEMORY AND MANUFACTURING METHOD THEREOF
Organization Name
Inventor(s)
Yu-Jen Yeh of Taichung City (TW)
FLASH MEMORY AND MANUFACTURING METHOD THEREOF - A simplified explanation of the abstract
This abstract first appeared for US patent application 17994009 titled 'FLASH MEMORY AND MANUFACTURING METHOD THEREOF
The abstract describes a flash memory and its manufacturing method, which includes various components such as a floating gate, dielectric layers, source and drain regions, an erase gate, and a select gate.
- The flash memory consists of a floating gate embedded in a substrate, with multiple dielectric layers surrounding it.
- The source region is located on one side of the floating gate, while the drain region is on the other side, both in contact with the substrate.
- An erase gate is positioned on the second dielectric layer, covering the exposed surface of the floating gate.
- A select gate is placed between the floating gate and the drain region on the substrate.
- The third dielectric layer is situated between the select gate and the substrate.
Potential Applications: - This flash memory technology can be used in various electronic devices such as smartphones, tablets, and laptops. - It can also be applied in data storage devices, digital cameras, and automotive electronics.
Problems Solved: - The flash memory provides a reliable and efficient storage solution for electronic devices. - It offers high-speed data access and secure data storage capabilities.
Benefits: - Improved data storage capacity and performance. - Enhanced reliability and durability of electronic devices. - Secure data storage and fast data access.
Commercial Applications: Title: Innovative Flash Memory Technology for Enhanced Data Storage This technology can be utilized in the consumer electronics industry for manufacturing high-performance storage devices. It can also benefit the automotive sector for data storage in vehicles, as well as in the medical field for storing critical patient information securely.
Questions about Flash Memory Technology: 1. How does the floating gate in the flash memory contribute to its functionality? The floating gate in the flash memory stores electrical charge, allowing for data storage and retrieval. 2. What are the advantages of using multiple dielectric layers in the flash memory design? Multiple dielectric layers help in isolating and protecting the floating gate, enhancing the reliability and performance of the flash memory.
Original Abstract Submitted
Provided are a flash memory and a manufacturing method thereof. The flash memory includes a floating gate disposed in a substrate, a first, a second and a third dielectric layers, a source region, a drain region, an erase gate on the second dielectric layer, and a select gate. The first dielectric layer is disposed between the floating gate and the substrate. The second dielectric layer covers the exposed surface of the floating gate. The source region is disposed in the substrate at one side of the floating gate and in contact with the first dielectric layer. The drain region is disposed in the substrate at another side of the floating gate and separated from the first dielectric layer. The select gate is disposed on the substrate between the floating gate and the drain region. The third dielectric layer is disposed between the select gate and the substrate.
