MEMORY DEVICE AND METHOD OF OPERATING THE SAME

Organization Name

SK hynix Inc.

Inventor(s)

Jong Kyung Park of Icheon-si Gyeonggi-do (KR)

Jae Yeop Jung of Icheon-si Gyeonggi-do (KR)

Dong Hun Kwak of Icheon-si Gyeonggi-do (KR)

MEMORY DEVICE AND METHOD OF OPERATING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 17972224 titled 'MEMORY DEVICE AND METHOD OF OPERATING THE SAME

Simplified Explanation

The abstract describes a memory device and a method of operating it. Here is a simplified explanation of the abstract:

The memory device consists of multiple memory cell strings, a peripheral circuit, and an operation controller.
The peripheral circuit is responsible for performing read operations on selected memory cells using different read voltages.
The operation controller controls the peripheral circuit to perform the read operation using a first read voltage, a first potential adjustment operation, and then a second read voltage that is lower than the first read voltage.
The first potential adjustment operation involves applying a first turn-on voltage to unselected source select lines connected to unselected memory cell strings for a specific period and then applying a ground voltage to those unselected source select lines.

Potential applications of this technology:

Memory devices using this method can be used in various electronic devices such as smartphones, tablets, and computers.
It can be applied in data storage systems, improving the performance and efficiency of memory operations.

Problems solved by this technology:

The method allows for more efficient read operations by using different read voltages and a potential adjustment operation.
It helps to reduce power consumption and improve the overall performance of the memory device.

Benefits of this technology:

Improved read operation efficiency and accuracy.
Reduced power consumption.
Enhanced performance and reliability of memory devices.

Original Abstract Submitted

Provided herein may be a memory device and a method of operating the same. The memory device may include a plurality of memory cell strings, a peripheral circuit configured to, using a plurality of read voltages, perform a read operation that reads data that is stored in a selected memory cell that is included in a selected memory cell string, and an operation controller configured to control the peripheral circuit to perform the read operation by using a first read voltage, a first potential adjustment operation, and the read operation by using a second read voltage that is lower than the first read voltage, wherein the first potential adjustment operation is an operation that applies a first turn-on voltage to unselected source select lines that are coupled to unselected memory cell strings for a first period and thereafter applies a ground voltage to the unselected source select lines.

17972224. MEMORY DEVICE AND METHOD OF OPERATING THE SAME simplified abstract (SK hynix Inc.)