17893718. FOLDED STAIRCASE VIA ROUTING FOR MEMORY simplified abstract (Micron Technology, Inc.)

FOLDED STAIRCASE VIA ROUTING FOR MEMORY

Organization Name

Micron Technology, Inc.

Inventor(s)

Shuangqiang Luo of Boise ID (US)

Lifang Xu of Boise ID (US)

FOLDED STAIRCASE VIA ROUTING FOR MEMORY - A simplified explanation of the abstract

This abstract first appeared for US patent application 17893718 titled 'FOLDED STAIRCASE VIA ROUTING FOR MEMORY

Simplified Explanation

The abstract describes methods, systems, and devices for folded staircase via routing for memory. A memory device includes word lines extending in a first direction, with first, second, and third vias in a trench that extends through at least a portion of the set of word lines. The first, second, and third vias extend in a second direction different from the first, with the second via between the first and third vias along the first direction and coupled with a word line. The first and third vias are electrically isolated from the word line.

• Memory device includes word lines in a first direction
• First, second, and third vias in a trench in a different direction
• Second via between first and third vias, coupled with a word line
• First and third vias electrically isolated from word line

Potential Applications

• Memory devices
• Computer systems
• Data storage devices

Problems Solved

• Efficient routing of memory components
• Increased memory density
• Improved memory performance

Benefits

• Higher memory capacity
• Enhanced memory access speed
• More compact memory design

Original Abstract Submitted

Methods, systems, and devices for folded staircase via routing for memory are described. For instance, a memory device may include a set of word lines extending in first direction. Additionally, the memory device may include a first via, a second via, and a third via in a trench that extends through at least a portion of the set of word lines The first via, the second via, and the third via may extend in a second direction different than the first, where the second via is between the first via and the third via along the first direction, and where the second via is coupled with a word line of the set of word lines. Additionally, the first via and the third via may be electrically isolated from the word line of the set of word lines.