17857395. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
DONG-WAN Kim of Hwaseong-si (KR)
DONG-SIK Park of Suwon-si (KR)
JIHOON Chang of Yongin-si (KR)
HYEON-WOO Jang of Hwaseong-si (KR)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 17857395 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation
The patent application describes a semiconductor device that includes a substrate with different regions, bit lines on the cell region, and a boundary pattern between the cell and peripheral regions. The bit lines have capping patterns made of the same material as the boundary pattern.
- The semiconductor device includes a substrate with different regions: cell, peripheral, and boundary.
- Bit lines are present on the cell region and extend in a parallel direction to the substrate's top surface.
- Bit line capping patterns are provided on the bit lines.
- A boundary pattern is present on the boundary region between the cell and peripheral regions.
- The end portions of the bit lines are in contact with the first interface of the boundary pattern.
- The bit line capping patterns and the boundary pattern are made of the same material.
Potential Applications
- This technology can be used in various semiconductor devices such as microprocessors, memory chips, and integrated circuits.
- It can enhance the performance and efficiency of these devices by improving the electrical connections and reducing signal interference.
Problems Solved
- The invention solves the problem of signal interference and degradation in semiconductor devices.
- It provides a reliable and efficient method for connecting bit lines and reducing noise in the boundary region.
Benefits
- Improved electrical connections between bit lines and the boundary region.
- Reduced signal interference and noise in the semiconductor device.
- Enhanced performance and efficiency of the device.
Original Abstract Submitted
A semiconductor device may include a substrate including a cell region, a peripheral region, and a boundary region between the cell region and the peripheral region, bit lines provided on the cell region and extended in a first direction parallel to a top surface of the substrate, bit line capping patterns provided on the bit lines, and a boundary pattern provided on the boundary region. End portions of the bit lines may be in contact with a first interface of the boundary pattern, and the bit line capping patterns may include the same material as the boundary pattern.