VERTICAL NON-VOLATILE MEMORY DEVICES

Organization Name

SAMSUNG ELECTRONICS CO., LTD.

Inventor(s)

Doohee Hwang of Uiwang-si (KR)

Taehun Kim of Gwacheon-si (KR)

Minkyung Bae of Hwaseong-si (KR)

Nayeong Yun of Hwaseong-si (KR)

VERTICAL NON-VOLATILE MEMORY DEVICES - A simplified explanation of the abstract

This abstract first appeared for US patent application 17849783 titled 'VERTICAL NON-VOLATILE MEMORY DEVICES

Simplified Explanation

The abstract describes a vertical non-volatile memory device with a memory stack structure and an information storage structure. The memory stack structure includes gate lines, interlayer insulating layers, and a channel hole. The channel layer extends in the stacking direction. The information storage structure includes a composite blocking insulating layer, a charge storage layer, and a tunneling insulating layer arranged horizontally from the gate lines to the channel layer. The composite blocking insulating layer consists of a metal oxide with a higher dielectric constant than silicon oxide. It includes a first blocking insulating layer on the sides of the gate lines and a second blocking insulating layer between the first blocking insulating layer and the charge storage layer, with a lower oxidation density than the first blocking insulating layer.

The patent describes a vertical non-volatile memory device with improved information storage structure.
The memory stack structure includes gate lines, interlayer insulating layers, and a channel hole.
The information storage structure consists of a composite blocking insulating layer, a charge storage layer, and a tunneling insulating layer.
The composite blocking insulating layer is made of a metal oxide with a higher dielectric constant than silicon oxide.
It includes a first blocking insulating layer on the sides of the gate lines and a second blocking insulating layer with lower oxidation density between the first blocking insulating layer and the charge storage layer.

Potential Applications

This technology has potential applications in the following areas:

Non-volatile memory devices
Semiconductor industry
Data storage and retrieval systems

Problems Solved

This technology solves the following problems:

Improves the information storage structure of vertical non-volatile memory devices
Enhances the performance and reliability of memory devices
Reduces power consumption and increases data retention capabilities

Benefits

The benefits of this technology include:

Higher dielectric constant of the composite blocking insulating layer improves memory device performance
Lower oxidation density of the second blocking insulating layer enhances data retention capabilities
Improved reliability and power efficiency of non-volatile memory devices

Original Abstract Submitted

A vertical non-volatile memory device includes: a memory stack structure including gate lines and interlayer insulating layers and a channel hole extending in a stacking direction; a channel layer in the channel hole and extending in the stacking direction; and an information storage structure including a composite blocking insulating layer, a charge storage layer, and a tunneling insulating layer sequentially arranged in a horizontal direction from the gate lines to the channel layer, wherein the composite blocking insulating layer includes a metal oxide having a higher dielectric constant than silicon oxide, and the composite blocking insulating layer includes a first blocking insulating layer on sides of the gate lines and a second blocking insulating layer that is between the first blocking insulating layer and the charge storage layer and has a lower oxidation density than the first blocking insulating layer.