17839806. SEMICONDUCTOR STRUCTURE HAVING HYBRID BONDING PAD simplified abstract (NANYA TECHNOLOGY CORPORATION)
SEMICONDUCTOR STRUCTURE HAVING HYBRID BONDING PAD
Organization Name
Inventor(s)
YI-JEN Lo of NEW TAIPEI CITY (TW)
SEMICONDUCTOR STRUCTURE HAVING HYBRID BONDING PAD - A simplified explanation of the abstract
This abstract first appeared for US patent application 17839806 titled 'SEMICONDUCTOR STRUCTURE HAVING HYBRID BONDING PAD
Simplified Explanation
The abstract describes a semiconductor structure and a method of manufacturing it. The structure includes a first semiconductor substrate, a first conductive pad, and a first hybrid bonding pad. The first conductive pad is located on top of the first semiconductor substrate, and the first hybrid bonding pad is on top of the first conductive pad. The first hybrid bonding pad is made of nano-twins copper and has a smaller thickness than the first conductive pad.
- The semiconductor structure includes a first semiconductor substrate.
- The structure has a first conductive pad located on top of the first semiconductor substrate.
- A first hybrid bonding pad is present on the first conductive pad.
- The first hybrid bonding pad is made of nano-twins copper.
- The thickness of the first hybrid bonding pad is smaller than the thickness of the first conductive pad.
Potential applications of this technology:
- Semiconductor manufacturing
- Electronics industry
- Integrated circuits
Problems solved by this technology:
- Improved bonding between semiconductor structures
- Enhanced electrical conductivity
- Reduction in thickness for space-saving designs
Benefits of this technology:
- Increased efficiency in semiconductor manufacturing
- Improved performance of electronic devices
- Compact and thinner designs for electronic components
Original Abstract Submitted
A semiconductor structure and a method of manufacturing a semiconductor structure are provided. The semiconductor structure includes a first semiconductor substrate, a first conductive pad, and a first hybrid bonding pad. The first conductive pad is over the first semiconductor substrate. The first hybrid bonding pad is on the first conductive pad. The first hybrid bonding pad includes nano-twins copper. A thickness of the first hybrid bonding pad is less than a thickness of the first conductive pad.