SEMICONDUCTOR DEVICES

Organization Name

Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor(s)

Blanka Magyari-kope of Hsinchu County (TW)

SEMICONDUCTOR DEVICES - A simplified explanation of the abstract

This abstract first appeared for US patent application 17835988 titled 'SEMICONDUCTOR DEVICES

Simplified Explanation

The patent application describes a semiconductor device that consists of three layers: a first electrode layer, a ferroelectric layer, and a second electrode layer. The ferroelectric layer is made up of a ferroelectric material that is doped with two different dopants, one of which is cerium. This layer is positioned between the two electrode layers.

The ferroelectric layer in the semiconductor device is doped with cerium and another dopant, which enhances its properties and performance.
The use of cerium as a dopant in the ferroelectric material improves the functionality of the semiconductor device.
The ferroelectric layer is sandwiched between two electrode layers, providing a structure that can be utilized in various electronic applications.

Potential Applications

Memory devices: The semiconductor device can be used in non-volatile memory applications, such as ferroelectric random-access memory (FeRAM) or ferroelectric field-effect transistors (FeFETs).
Sensors: The device can be employed in sensors that require high sensitivity and stability, such as pressure sensors or temperature sensors.
Energy storage: The ferroelectric layer can be utilized in energy storage devices, such as capacitors or batteries, due to its ability to retain charge.

Problems Solved

Enhanced performance: The use of cerium and another dopant in the ferroelectric layer improves the functionality and performance of the semiconductor device.
Stability: The ferroelectric layer provides stability to the device, allowing it to retain its properties over time.
Compatibility: The device can be integrated into existing electronic systems and circuits due to its compatibility with standard semiconductor fabrication processes.

Benefits

Improved functionality: The doping of the ferroelectric layer with cerium and another dopant enhances the performance and functionality of the semiconductor device.
Versatility: The device can be utilized in various electronic applications, including memory devices, sensors, and energy storage.
Compatibility: The semiconductor device can be easily integrated into existing electronic systems and circuits, making it a practical solution for different industries.

Original Abstract Submitted

A semiconductor device includes a first electrode layer, a ferroelectric layer, and a second electrode layer. A material of the ferroelectric layer comprises a ferroelectric material doped with a first dopant and a second dopant different from the first dopant, and the first dopant comprises cerium. The ferroelectric layer is disposed between the first electrode layer and the second electrode layer.