17830800. CROSS-TEMPERATURE COMPENSATION IN NON-VOLATILE MEMORY DEVICES simplified abstract (Micron Technology, Inc.)

CROSS-TEMPERATURE COMPENSATION IN NON-VOLATILE MEMORY DEVICES

Organization Name

Micron Technology, Inc.

Inventor(s)

Andrea Giovanni Xotta of Cornedo Vicentino (IT)

Umberto Siciliani of Rubano (IT)

CROSS-TEMPERATURE COMPENSATION IN NON-VOLATILE MEMORY DEVICES - A simplified explanation of the abstract

This abstract first appeared for US patent application 17830800 titled 'CROSS-TEMPERATURE COMPENSATION IN NON-VOLATILE MEMORY DEVICES

Simplified Explanation

The patent application describes a system and method for improving the read operation of a memory device based on the temperature at which the data was written.

• The system includes a memory device and a processing device.
• The processing device performs a first read operation on the memory device to retrieve data.
• The first data contains information about the temperature at which the data was written.
• The processing device determines the write temperature based on the first data.
• A read voltage value is calculated based on the write temperature.
• The processing device performs a second read operation on the memory device using the read voltage value to obtain the original data.

Potential Applications

• This technology can be applied in various memory devices such as solid-state drives (SSDs) and random-access memory (RAM).
• It can improve the read performance of memory devices by optimizing the read voltage based on the temperature at which the data was written.

Problems Solved

• Memory devices can experience variations in performance based on temperature.
• By considering the write temperature during the read operation, this technology helps mitigate the impact of temperature on read performance.
• It allows for more accurate retrieval of data, especially in scenarios where temperature fluctuations are common.

Benefits

• Improved read performance of memory devices.
• Enhanced accuracy in retrieving data, reducing the risk of errors.
• Increased reliability and efficiency of memory devices.
• Better adaptability to temperature changes, ensuring consistent performance.

Original Abstract Submitted

Systems and methods are disclosed including a memory device and a processing device operatively coupled to the memory device. The processing device can perform operations comprising performing a first read operation on the memory device to retrieve first data; determining, from the first data, second data indicative of a write temperature associated with the first data, wherein the write temperature is indicative of a temperature measured during a write operation; determining a read voltage value based on the second data; and performing a second read operation on the memory device using the read voltage value to obtain the first data.