17822712. STAIRCASE FORMATION IN A MEMORY ARRAY simplified abstract (Micron Technology, Inc.)

STAIRCASE FORMATION IN A MEMORY ARRAY

Organization Name

Micron Technology, Inc.

Inventor(s)

Alyssa N. Scarbrough of Boise ID (US)

Lifang Xu of Boise ID (US)

Jordan D. Greenlee of Boise ID (US)

STAIRCASE FORMATION IN A MEMORY ARRAY - A simplified explanation of the abstract

This abstract first appeared for US patent application 17822712 titled 'STAIRCASE FORMATION IN A MEMORY ARRAY

Simplified Explanation

The abstract describes methods, systems, and devices for forming a staircase in a memory array using liner materials that are doped and selectively removed.

• First liner material is deposited on a tread above a first contact surface and a portion of it is doped.
• Second liner material is deposited over the first liner, with a portion of it also being doped.
• Undoped portions of the liner materials are removed above a second contact surface via a first removal process.
• The doped portion of the first liner material is cut back to expose the second contact surface and a third contact.

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1. 1. 1. Potential Applications

• Memory array fabrication
• Semiconductor manufacturing

1. 1. 1. Problems Solved

• Efficient formation of staircases in memory arrays
• Selective doping and removal of liner materials

1. 1. 1. Benefits

• Improved memory array performance
• Enhanced manufacturing processes
• Increased efficiency in semiconductor fabrication

Original Abstract Submitted

Methods, systems, and devices for staircase formation in a memory array are described. A first liner material may be deposited on a tread above a first contact surface and a portion of the first liner material may be doped. A second liner material may be deposited over the first liner and a portion of the second liner material may be doped. After doping the portions of the liner materials, the undoped portions of the liner materials may be removed so that the materials above a second contact surface can be at least partially removed via a first removal process. The doped portion of the first liner material may then be cut back so that a second removal process can expose the second contact surface and a third contact (while the first contact surface is protected from the removal process by the liner materials).