SEMICONDUCTOR MEMORY DEVICE

Organization Name

SAMSUNG ELECTRONICS CO., LTD.

Inventor(s)

Rahul Mishra of Singapore (SG)

Hyunsoo Yang of Singapore (SG)

Ung Hwan Pi of Hwaseong-si (KR)

SEMICONDUCTOR MEMORY DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 17814057 titled 'SEMICONDUCTOR MEMORY DEVICE

Simplified Explanation

The abstract describes a semiconductor memory device that utilizes spin-orbit coupling (SOC) to provide a spin-orbit torque to data storage patterns. The device includes data storage patterns with first and second sides, a SOC channel layer in contact with the first sides, read access transistors connected to the second sides, a write access transistor connected to one end of the SOC channel layer, and a bit line connected to the other end of the SOC channel layer. Each data storage pattern consists of a free layer in contact with the SOC channel layer and an oxygen reservoir layer in contact with the free layer.

The semiconductor memory device utilizes spin-orbit coupling (SOC) to provide a spin-orbit torque to data storage patterns.
The data storage patterns have first and second sides, with a SOC channel layer in contact with the first sides.
Read access transistors are connected to the second sides of the data storage patterns.
A write access transistor is connected to one end of the SOC channel layer.
A bit line is connected to the other end of the SOC channel layer.
Each data storage pattern consists of a free layer in contact with the SOC channel layer and an oxygen reservoir layer in contact with the free layer.

Potential Applications

This semiconductor memory device can be used in various electronic devices such as computers, smartphones, and tablets.
It can be applied in data storage systems, allowing for faster and more efficient data access and retrieval.

Problems Solved

The use of spin-orbit coupling (SOC) in the memory device provides a spin-orbit torque, which can improve the performance and reliability of data storage patterns.
The inclusion of an oxygen reservoir layer helps to stabilize the free layer, reducing the risk of data loss or corruption.

Benefits

The SOC channel layer and spin-orbit torque enable faster and more energy-efficient data storage and retrieval.
The inclusion of an oxygen reservoir layer enhances the stability and reliability of the data storage patterns.
The semiconductor memory device offers a compact and efficient solution for data storage in electronic devices.

Original Abstract Submitted

A semiconductor memory device may be provided. The semiconductor memory device may include data storage patterns having respective first sides and respective second sides, a spin-orbit coupling (SOC) channel layer in common contact with the first sides of the data storage patterns, the SOC channel layer is configured to provide a spin-orbit torque to the data storage patterns, read access transistors connected between the second sides of respective ones of the data storage patterns and respective data lines, a write access transistor connected between a first end of the SOC channel layer and a source line, and a bit line connected to a second end of the SOC channel layer. Each of the data storage patterns comprises a free layer in contact with the SOC channel layer and an oxygen reservoir layer in contact with the free layer.