17804997. SELF-ALIGNED ETCHING TECHNIQUES FOR MEMORY FORMATION simplified abstract (Micron Technology, Inc.)

SELF-ALIGNED ETCHING TECHNIQUES FOR MEMORY FORMATION

Organization Name

Micron Technology, Inc.

Inventor(s)

John Hopkins of Meridian ID (US)

Jordan D. Greenlee of Boise ID (US)

SELF-ALIGNED ETCHING TECHNIQUES FOR MEMORY FORMATION - A simplified explanation of the abstract

This abstract first appeared for US patent application 17804997 titled 'SELF-ALIGNED ETCHING TECHNIQUES FOR MEMORY FORMATION

Simplified Explanation

The patent application describes a self-aligned etching technique for memory formation. It involves the use of a stack of alternating materials and a pillar to create multiple memory cells. A polysilicon material is formed above the pillar and is associated with a selector device for the memory cells. A masking material is then formed above the polysilicon material and the stack of alternating materials. The masking material is aligned with the polysilicon material and has a greater width than the polysilicon material and the pillar. This masking material prevents the removal of the polysilicon material, the pillar, and a portion of the stack of alternating materials during an etching operation.

• Memory device with self-aligned etching technique for memory formation
• Stack of alternating materials and a pillar form multiple memory cells
• Polysilicon material above the pillar associated with a selector device
• Masking material prevents removal of polysilicon material, pillar, and portion of stack during etching operation

Potential Applications

• Semiconductor industry
• Memory chip manufacturing
• Electronic devices

Problems Solved

• Accurate and precise etching of memory cells
• Alignment of materials during the etching process
• Prevention of unwanted removal of materials

Benefits

• Improved memory device performance
• Enhanced manufacturing efficiency
• Cost-effective production of memory chips

Original Abstract Submitted

Methods, systems, and devices for self-aligned etching techniques for memory formation are described. A memory device may include a stack of alternating materials and a pillar extending through the stack of alternating materials, where the stack of alternating materials and the pillar may form a set of multiple memory cells. A polysilicon material may be formed above the pillar, where the polysilicon material may be associated with a selector device for the memory cells. A masking material may be formed above the polysilicon material and the stack of alternating materials, where the masking material may be aligned with the polysilicon material and may have a width that is greater than a width of the polysilicon material and the pillar. The masking material may prevent the polysilicon material, the pillar, and a portion of the stack of alternating materials beneath the masking material from being removed during an etching operation.