NON-VOLATILE MEMORY DEVICE

Organization Name

SAMSUNG ELECTRONICS CO., LTD.

Inventor(s)

Kuihan Ko of Seoul (KR)

Sangwon Park of Seoul (KR)

Minyong Kim of Suwon-si (KR)

Jekyung Choi of Hwaseong-si (KR)

Junho Choi of Gwangju-si (KR)

NON-VOLATILE MEMORY DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 17742879 titled 'NON-VOLATILE MEMORY DEVICE

Simplified Explanation

Abstract: This patent application describes a non-volatile memory device that includes word lines stacked on a substrate, string select lines on the word lines, and a memory cell array with memory blocks. The string select lines are spaced apart from each other in a horizontal direction and extend in another horizontal direction. The memory device performs program operations on memory cells connected to the word lines and string select lines in a specific order.

The memory device includes word lines, string select lines, and memory blocks.
Word lines are stacked on a substrate.
String select lines are positioned on the word lines and spaced apart from each other in one direction.
String select lines extend in another direction.
Memory blocks consist of memory cells connected to the word lines and string select lines.
The memory device performs program operations on memory cells in a specific order.

Potential Applications:

Non-volatile memory devices can be used in various electronic devices such as smartphones, tablets, and computers.
This technology can be applied in data storage systems, allowing for efficient and reliable data storage.

Problems Solved:

This technology solves the problem of efficiently programming memory cells in a non-volatile memory device.
By performing program operations in a specific order, the memory device ensures optimal programming efficiency.

Benefits:

The memory device provides improved programming efficiency by performing program operations in a specific order.
This technology enhances the reliability and performance of non-volatile memory devices.
By optimizing the programming process, the memory device can offer faster data storage and retrieval.

Original Abstract Submitted

A non-volatile memory device is provided. The memory device includes: word lines stacked on a substrate; a string select lines on the word lines, the string select lines being spaced apart from each other in a first horizontal direction and extending in a second horizontal direction; and a memory cell array including memory blocks, each of which includes memory cells connected to the word lines and the string select lines. The string select lines include a first string select line, and a second string select line which is farther from a word line cut region than the first string select line, and a program operation performed on second memory cells connected to a selected word line and the second string select line is performed before a program operation performed on first memory cells connected to the selected word line and the first string select line.