17590863. METHODS OF FORMING FIN-ON-NANOSHEET TRANSISTOR STACKS simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
METHODS OF FORMING FIN-ON-NANOSHEET TRANSISTOR STACKS
Organization Name
Inventor(s)
Gunho Jo of Schenectady NY (US)
Ki-il Kim of Clifton Park NY (US)
Byounghak Hong of Albany NY (US)
METHODS OF FORMING FIN-ON-NANOSHEET TRANSISTOR STACKS - A simplified explanation of the abstract
This abstract first appeared for US patent application 17590863 titled 'METHODS OF FORMING FIN-ON-NANOSHEET TRANSISTOR STACKS
Simplified Explanation
The abstract describes a method for forming multiple transistor stacks using nanosheets and semiconductor fins.
- Etching of nanosheets is performed using spacers on the sidewalls of semiconductor fins as an etch mask.
- This process creates spaced-apart nanosheet stacks with semiconductor fins on each stack.
Potential Applications
This technology can be applied in various fields, including:
- Semiconductor manufacturing
- Electronics industry
- Integrated circuit fabrication
Problems Solved
The method addresses the following problems:
- Efficient formation of multiple transistor stacks
- Precise etching of nanosheets
- Ensuring proper alignment and spacing of nanosheet stacks
Benefits
The benefits of this technology include:
- Improved transistor stack formation process
- Enhanced control over nanosheet etching
- Increased efficiency and accuracy in semiconductor manufacturing
Original Abstract Submitted
Methods of forming a plurality of transistor stacks are provided. A method of forming a plurality of transistor stacks includes etching a plurality of nanosheets, using a plurality of spacers that are on sidewalls of a plurality of semiconductor fins as an etch mask, to provide a plurality of spaced-apart nanosheet stacks that each have at least one of the semiconductor fins thereon.
