US Patent Application 18446562. Polymer Layer in Semiconductor Device and Method of Manufacture simplified abstract
Jump to navigation
Jump to search
Contents
Polymer Layer in Semiconductor Device and Method of Manufacture
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Sih-Hao Liao of New Taipei City (TW)
Polymer Layer in Semiconductor Device and Method of Manufacture - A simplified explanation of the abstract
This abstract first appeared for US patent application 18446562 titled 'Polymer Layer in Semiconductor Device and Method of Manufacture
Simplified Explanation
The patent application describes a method of manufacturing a semiconductor device using a polymer mixture.
- The method involves applying the polymer mixture onto a substrate.
- A portion of the polymer mixture is exposed and developed to form a dielectric layer.
- The developed dielectric layer is then cured to enhance its properties.
- The polymer mixture consists of a polymer precursor, a photosensitizer, and a solvent.
- The polymer precursor used in the mixture is a polyamic acid ester.
Original Abstract Submitted
A method of manufacturing a semiconductor device includes applying a polymer mixture over a substrate, exposing and developing at least a portion of the polymer mixture to form a developed dielectric, and curing the developed dielectric to form a dielectric layer. The polymer mixture includes a polymer precursor, a photosensitizer, and a solvent. The polymer precursor may be a polyamic acid ester.
