US Patent Application 18446291. Semiconductor Devices and Methods of Manufacturing simplified abstract

From WikiPatents
Jump to navigation Jump to search

Semiconductor Devices and Methods of Manufacturing

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor(s)

Chang-Yi Yang of Hsinchu (TW)

Po-Yao Chuang of Hsinchu (TW)

Shin-Puu Jeng of Hsinchu (TW)

Semiconductor Devices and Methods of Manufacturing - A simplified explanation of the abstract

This abstract first appeared for US patent application 18446291 titled 'Semiconductor Devices and Methods of Manufacturing

Simplified Explanation

The patent application describes a method for assembling and encapsulating semiconductor devices using a redistribution structure and conductive material.

  • The method involves forming a redistribution structure with metallization patterns.
  • A semiconductor device is attached to one side of the redistribution structure.
  • The semiconductor device is encapsulated with a first encapsulant.
  • Openings are formed in the first encapsulant to expose the metallization pattern.
  • A conductive material, such as a conductive paste, is filled in the openings.
  • Integrated devices are attached to the other side of the redistribution structure.
  • The integrated devices are encapsulated with a second encapsulant.
  • A pre-solder material is formed on the conductive material after encapsulating the integrated devices.


Original Abstract Submitted

A method includes forming a redistribution structure including metallization patterns; attaching a semiconductor device to a first side of the redistribution structure; encapsulating the semiconductor device with a first encapsulant; forming openings in the first encapsulant, the openings exposing a metallization pattern of the redistribution structure; forming a conductive material in the openings, comprising at least partially filling the openings with a conductive paste; after forming the conductive material, attaching integrated devices to a second side of the redistribution structure; encapsulating the integrated devices with a second encapsulant; and after encapsulating the integrated devices, forming a pre-solder material on the conductive material.