US Patent Application 18360667. PVD TARGET DESIGN AND SEMICONDUCTOR DEVICES FORMED USING THE SAME simplified abstract

PVD TARGET DESIGN AND SEMICONDUCTOR DEVICES FORMED USING THE SAME

Organization Name

Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor(s)

Chia-Hsi Wang of Hsinchu (TW)

Yen-Yu Chen of Hsinchu (TW)

Yi-Chih Chen of Hsinchu (TW)

Shih-Wei Bih of Hsinchu (TW)

PVD TARGET DESIGN AND SEMICONDUCTOR DEVICES FORMED USING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 18360667 titled 'PVD TARGET DESIGN AND SEMICONDUCTOR DEVICES FORMED USING THE SAME

Simplified Explanation

The abstract describes a physical vapor deposition (PVD) target used in a PVD process.

• The PVD target consists of a backing plate and a target plate.
• The target plate contains a sputtering source material and a dopant.
• The dopant is not impurities in the sputtering source material.
• The sputtering source material includes a diffusion barrier material.

Original Abstract Submitted

A physical vapor deposition (PVD) target for performing a PVD process is provided. The PVD target includes a backing plate and a target plate coupled to the backing plate. The target plate includes a sputtering source material and a dopant, with the proviso that the dopant is not impurities in the sputtering source material. The sputtering source material includes a diffusion barrier material.