US Patent Application 18359792. METHODS OF FORMING MICROELECTRONIC DEVICES simplified abstract
Contents
METHODS OF FORMING MICROELECTRONIC DEVICES
Organization Name
Inventor(s)
Collin Howder of Boise ID (US)
Justin D. Shepherdson of Meridian ID (US)
Chet E. Carter of Boise ID (US)
METHODS OF FORMING MICROELECTRONIC DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 18359792 titled 'METHODS OF FORMING MICROELECTRONIC DEVICES
Simplified Explanation
- The patent application describes a microelectronic device that consists of a source structure and a stack structure. - The stack structure is made up of alternating insulative and conductive structures arranged vertically. - Slits filled with a material extend through the stack structure and into the source structure, dividing the stack structure into multiple blocks. - Memory cell pillars also extend through the stack structure and into the source structure. - The memory cell pillars and filled slits terminate at the same depth within the source structure. - The innovation allows for improved memory cell functionality and organization within the microelectronic device.
Original Abstract Submitted
A microelectronic device may include a source structure and a stack structure. The stack structure may include a vertically alternating sequence of insulative structures and conductive structures. Filled slits may extend through the stack structure and into the source structure, the slits dividing the stack structure into multiple blocks. Memory cell pillars may extend through the stack structure and into the source structure, the memory cell pillars and the filled slits terminated at substantially the same depth within the source structure as one another.
