US Patent Application 18327840. GERMANIUM PRECURSORS, METHODS OF FORMING THE GERMANIUM PRECURSORS, AND PRECURSOR COMPOSITIONS COMPRISING THE GERMANIUM PRECURSORS simplified abstract (Micron Technology, Inc.)

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GERMANIUM PRECURSORS, METHODS OF FORMING THE GERMANIUM PRECURSORS, AND PRECURSOR COMPOSITIONS COMPRISING THE GERMANIUM PRECURSORS

Organization Name

Micron Technology, Inc.

Inventor(s)

Gurtej S. Sandhu of Boise ID (US)

Sumeet C. Pandey of Boise ID (US)

Stefan Uhlenbrock of Boise ID (US)

John A. Smythe of Boise ID (US)

GERMANIUM PRECURSORS, METHODS OF FORMING THE GERMANIUM PRECURSORS, AND PRECURSOR COMPOSITIONS COMPRISING THE GERMANIUM PRECURSORS - A simplified explanation of the abstract

This abstract first appeared for US patent application 18327840 titled 'GERMANIUM PRECURSORS, METHODS OF FORMING THE GERMANIUM PRECURSORS, AND PRECURSOR COMPOSITIONS COMPRISING THE GERMANIUM PRECURSORS

Simplified Explanation

The abstract describes a germanium precursor with a specific chemical formula and various possible substituents. It also mentions methods of forming the precursor and a composition including the precursor.

  • The germanium precursor has a chemical formula of Ge(RNC(R)NR)(R), where R, R, R, and R can be hydrogen, alkyl, substituted alkyl, alkoxide, substituted amide, amine, substituted amine, or halogen.
  • The patent application discloses methods for producing the germanium precursor.
  • The patent application also includes a precursor composition that incorporates the germanium precursor.

Potential applications of this technology could include:

  • Semiconductor manufacturing: Germanium is used in the production of semiconductors, and this precursor could be used in the fabrication process.
  • Optoelectronics: Germanium is also used in optoelectronic devices such as photodetectors and solar cells, so this precursor could be useful in their production.
  • Chemical synthesis: The germanium precursor could be used as a starting material for the synthesis of various germanium-containing compounds with potential applications in materials science and catalysis.


Original Abstract Submitted

A germanium precursor comprising a chemical formula of Ge(RNC(R)NR)(R) where each of R, R, R, and Ris independently selected from the group consisting of hydrogen, an alkyl, a substituted alkyl, an alkoxide, a substituted amide, an amine, a substituted amine, and a halogen. Methods of forming the germanium precursor and a precursor composition including the germanium precursor are also disclosed.