US Patent Application 18327840. GERMANIUM PRECURSORS, METHODS OF FORMING THE GERMANIUM PRECURSORS, AND PRECURSOR COMPOSITIONS COMPRISING THE GERMANIUM PRECURSORS simplified abstract

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GERMANIUM PRECURSORS, METHODS OF FORMING THE GERMANIUM PRECURSORS, AND PRECURSOR COMPOSITIONS COMPRISING THE GERMANIUM PRECURSORS

Organization Name

Micron Technology, Inc.

Inventor(s)

Gurtej S. Sandhu of Boise ID (US)

Sumeet C. Pandey of Boise ID (US)

Stefan Uhlenbrock of Boise ID (US)

John A. Smythe of Boise ID (US)

GERMANIUM PRECURSORS, METHODS OF FORMING THE GERMANIUM PRECURSORS, AND PRECURSOR COMPOSITIONS COMPRISING THE GERMANIUM PRECURSORS - A simplified explanation of the abstract

This abstract first appeared for US patent application 18327840 titled 'GERMANIUM PRECURSORS, METHODS OF FORMING THE GERMANIUM PRECURSORS, AND PRECURSOR COMPOSITIONS COMPRISING THE GERMANIUM PRECURSORS

Simplified Explanation

The abstract describes a germanium precursor, which is a compound used in the production of germanium-based materials. The chemical formula of the precursor is Ge(RNC(R)NR)(R), where R can be hydrogen, alkyl, alkoxide, amide, amine, or halogen. The abstract also mentions methods of forming the germanium precursor and a precursor composition including the germanium precursor.

  • The patent application is about a germanium precursor compound.
  • The compound has a specific chemical formula: Ge(RNC(R)NR)(R).
  • The compound can be used in the production of germanium-based materials.
  • The compound can have various substituents, such as hydrogen, alkyl, alkoxide, amide, amine, or halogen.
  • The patent application also describes methods of forming the germanium precursor.
  • A precursor composition including the germanium precursor is also disclosed in the patent application.


Original Abstract Submitted

A germanium precursor comprising a chemical formula of Ge(RNC(R)NR)(R) where each of R, R, R, and Ris independently selected from the group consisting of hydrogen, an alkyl, a substituted alkyl, an alkoxide, a substituted amide, an amine, a substituted amine, and a halogen. Methods of forming the germanium precursor and a precursor composition including the germanium precursor are also disclosed.