US Patent Application 18230669. IN SITU AND TUNABLE DEPOSITION OF A FILM simplified abstract
Contents
IN SITU AND TUNABLE DEPOSITION OF A FILM
Organization Name
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
Inventor(s)
Chia-Hsi Wang of Changhua County (TW)
Yen-Yu Chen of Taichung City (TW)
Jen-Hao Chien of Taichung (TW)
IN SITU AND TUNABLE DEPOSITION OF A FILM - A simplified explanation of the abstract
This abstract first appeared for US patent application 18230669 titled 'IN SITU AND TUNABLE DEPOSITION OF A FILM
Simplified Explanation
The abstract describes a method for depositing a film of boron-containing cobalt iron alloy (FeCoB) on a substrate using physical vapor deposition (PVD) technique. Here are the key points:
- The method involves introducing two PVD targets into a PVD system.
- The first target contains a boron-containing cobalt iron alloy (FeCoB) with an initial boron concentration.
- The second target contains boron.
- Parameters of the PVD system are determined based on a target boron concentration that is higher than the initial boron concentration.
- A film of FeCoB is deposited on a substrate using the determined parameters of the PVD system.
Original Abstract Submitted
A method is provided. The method includes the following steps: introducing a first physical vapor deposition (PVD) target and a second PVD target in a PVD system, the first PVD target containing a boron-containing cobalt iron alloy (FeCoB) with an initial boron concentration, and the second PVD target containing boron; determining parameters of the PVD system based on a target boron concentration larger than the initial boron concentration; and depositing a FeCoB film on a substrate according to the parameters of the PVD system.
