US Patent Application 18169839. SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME simplified abstract
Contents
SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME
Organization Name
CHANGXIN MEMORY TECHNOLOGIES, INC.
Inventor(s)
SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18169839 titled 'SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME
Simplified Explanation
The abstract describes a semiconductor structure consisting of two bonded semiconductor layers with redistribution lines. The first layer has a redistribution line with a certain length on the bonding surface, while the second layer has a different length for its redistribution line on the same surface. The two redistribution lines are electrically connected to each other. The abstract also mentions a method for forming this semiconductor structure.
- Semiconductor structure with two bonded layers
- First layer has a redistribution line with a specific length on the bonding surface
- Second layer has a different length for its redistribution line on the same surface
- The redistribution lines are electrically connected
- Method for forming the semiconductor structure is provided
Original Abstract Submitted
A semiconductor structure includes a first semiconductor layer and a second semiconductor layer bonded to each other. The first semiconductor layer includes a first redistribution line, and the first redistribution line has a first projection length on a bonding surface of the first semiconductor layer and the second semiconductor layer. The second semiconductor layer includes a second redistribution line, and the second redistribution line has a second projection length on the bonding surface. The first projection length is different from the second projection length. The first redistribution line is electrically connected to the second redistribution line. A method for forming the same is also provided.
