US Patent Application 18163135. SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING SEMICONDUCTOR STRUCTURE simplified abstract

From WikiPatents
Jump to navigation Jump to search

SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING SEMICONDUCTOR STRUCTURE

Organization Name

CHANGXIN MEMORY TECHNOLOGIES, INC.

Inventor(s)

YOUMING Liu of Hefei City (CN)

SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING SEMICONDUCTOR STRUCTURE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18163135 titled 'SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING SEMICONDUCTOR STRUCTURE

Simplified Explanation

The patent application describes a semiconductor structure and a method for forming it.

  • The structure includes a substrate, a switching transistor, and a storage transistor.
  • The switching transistor has a first gate electrode, a first channel layer, and first and second source-drain electrodes.
  • The storage transistor has a second gate electrode, a second channel layer, and third and fourth source-drain electrodes.
  • The second gate electrode is electrically connected to the second source-drain electrode.
  • The storage transistor is designed to store charge.


Original Abstract Submitted

A semiconductor structure and a method for forming the same are provided. The semiconductor structure includes a substrate, a switching transistor and a storage transistor. The switching transistor includes a first gate electrode, a first channel layer coating a portion of the first gate electrode, and a first source-drain electrode and a second source-drain electrode both covering a surface of the first channel layer. The storage transistor includes a second gate electrode, a second channel layer coating a portion of the second gate electrode, and a third source-drain electrode and a fourth source-drain electrode both covering a surface of the second channel layer. A portion of the second gate electrode extending out of the second channel layer in a first direction is electrically connected to the second source-drain electrode. The storage transistor is configured to store charge.